Advantages of InGaN Solar Cells With p-Doped and High-Al-Content Superlattice AlGaN Barriers

In this letter, the photovoltaic characteristics of InGaN/AlGaN superlattice solar cells with In=21% and 40% in InGaN multiple quantum wells, and Al=14% and 20% in AlGaN barriers are investigated. The results obtained numerically show that an increment of 18.2% in short-circuit current density is ac...

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Published inIEEE photonics technology letters Vol. 25; no. 1; pp. 85 - 87
Main Authors Kuo, Yen-Kuang, Chang, Yi-An, Lin, Han-Wei, Chang, Jih-Yuan, Yen, Shih-Hsun, Chen, Fang-Ming, Chen, Yu-Han
Format Journal Article
LanguageEnglish
Published IEEE 01.01.2013
Subjects
Absorption
Aluminum gallium nitride
Gallium nitride
InGaN/AlGaN
numerical simulation
Photovoltaic cells
Photovoltaic systems
photovoltaics
superlattice solar cells
Superlattices
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Summary:In this letter, the photovoltaic characteristics of InGaN/AlGaN superlattice solar cells with In=21% and 40% in InGaN multiple quantum wells, and Al=14% and 20% in AlGaN barriers are investigated. The results obtained numerically show that an increment of 18.2% in short-circuit current density is achieved by introducing p-type doped (hole concentration = 3×10 17 cm -3 ) Al 0.2 Ga 0.8 N barriers in In 0.4 Ga 0.6 N superlattice solar cell when compared with undoped Al 0.14 Ga 0.86 N barriers. This improvement is mainly attributed to the increased electric field in the main absorption region, which is beneficial for the holes in the valence band to move towards the p-region. The capability of carrier transport is efficiently improved, thus increasing the carrier-collection efficiency and the conversion efficiency.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2012.2228636