Design of a Vertical Cylinder GaN Junctionless FET based on its GaN-on-GaN Substrate and Electrical Performance

• Published in: Journal of semiconductor technology and science Vol. 23; no. 6; pp. 359 - 366
• Main Authors: Jeon, So-Ra, Lee, Sang-Ho, Park, Jin, Kang, Ga-Eon, Heo, Jun Hyeok, Kim, Min Seok, Bae, Seung Ji, Hong, Jeong Woo, Kang, In Man
• Format: Journal Article
• Language: English
• Published: 대한전자공학회 01.12.2023
• Subjects: 전기공학; vertical power transistor; Gallium nitride(GaN); JLFET; GaN-on-GaN substrate
• ISSN: 1598-1657; 2233-4866; 2233-4866; 1598-1657
• DOI: 10.5573/JSTS.2023.23.6.359

This study presents a comparative analysis of the vertical cylinder and fin-type junctionless field- effect transistors (JLFETs) based on GaN-on-GaN substrates using three-dimensional technical computer-aided design (3D TCAD) simulations. The on-current (Ion) values of the vertical cylinder and fin-type JLFETs are 6.45 and 5.63 kA/cm2, respectively. The corresponding off-current (Ioff) of the devices is calculated as 2.51 × 10−10¬ and 9.72 × 10−2¬ A/cm2, respectively. Furthermore, their corresponding Ion/Ioff ratios are 2.57 × 1013 and 5.79 × 104, respectively. Additionally, the Ioff ratio of the devices is 2.58 × 109, and the subthreshold swing (SS) is calculated as 101 and 346 mV/dec, respectively. The static resistance (Ron) and breakdown voltage (BV) represent the figure of merits of the power transistor. Herein, Ron of the vertical cylinder-type device is 0.11 µΩ•cm2, which is lower than 0.62 µΩ•cm2 of the vertical fin-type device, whereas their corresponding BVs are calculated as 2,400 and 2,037 V, respectively. These results show that the BV of the vertical cylinder-type device is ~17.8% higher than that of the vertical fin-type device. Therefore, the vertical cylinder-type GaN JLFET has a higher performance than the vertical fin-type GaN JLFET. Herein, we provide guidance in the designing of high-performance vertical GaN power transistors. KCI Citation Count: 0