Electrical Characteristics and Fast Neutron Response of Semi-Insulating Bulk Silicon Carbide
The electrical characteristics and fast neutron response of a High Temperature Chemical Vapour Deposition (HTCVD) grown semi-insulating bulk SiC wafer has been measured. Current-Voltage measurements demonstrated a low leakage current in the region of 10 -10 to 10 -12v A with a bulk resistivity of at...
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Published in | IEEE transactions on nuclear science Vol. 60; no. 2; pp. 1432 - 1435 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.04.2013
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Subjects | |
Online Access | Get full text |
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Summary: | The electrical characteristics and fast neutron response of a High Temperature Chemical Vapour Deposition (HTCVD) grown semi-insulating bulk SiC wafer has been measured. Current-Voltage measurements demonstrated a low leakage current in the region of 10 -10 to 10 -12v A with a bulk resistivity of at least 10 12 -10 13 Ω.cm. Alpha particle spectroscopy measurements demonstrated an electron charge collection efficiency of up to 90% with reasonable reproducibility of the acquired spectra. Evidence of (incident particle) rate dependent polarisation was seen following a constant applied bias combined with alpha irradiation over a period of time (order of tens of minutes). The ability of the wafer to detect fast neutrons was demonstrated and a comparison drawn with the MCNPX simulated response of a bulk SiC device. Comparing the MCNPX simulated response of a bulk SiC device to that of a silicon device suggests a superior ability to detect fast neutrons with an intrinsic efficiency 1.7 times that of silicon. |
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ISSN: | 0018-9499 1558-1578 |
DOI: | 10.1109/TNS.2013.2243753 |