Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si

• Published in: Physica. B, Condensed matter Vol. 407; no. 15; pp. 2900 - 2902
• Main Authors: Takakura, Kenichiro, Funasaki, Suguru, Tsunoda, Isao, Ohyama, Hidenori, Takeuchi, Daisuke, Nakashima, Toshiyuki, Shibuya, Mutsuo, Murakami, Katsuya, Simoen, Eddy, Claeys, Cor
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Kidlington Elsevier B.V 01.08.2012; Elsevier
• Subjects: Adsorbed layers and thin films; Condensed matter: electronic structure, electrical, magnetic, and optical properties; EDX; Electron and ion emission by liquids and solids; impact phenomena; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Gallium oxide; Low-field transport and mobility; piezoresistance; Photoemission and photoelectron spectra; Physics; Si doping; Transparent electrode; XPS; XRD; EDX; XPS; XRD; Gallium oxide; Transparent electrode; Si doping; Electrical conductivity; Impurity density; Dispersive spectrometry; Silicon additions; Thin films; Valence; Sintering; Radiofrequency sputtering; X-ray photoelectron spectra
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2011.08.061

A transparent electrode of Si doped β-Ga2O3 films for solar cells, flat panel displays and other devices, which consists of chemically abundant and ecological friendly elements of gallium and oxygen, was grown on silicon substrates by RF magnetron sputtering using sintered Ga2O3 and Si target. The Si composition in the β-Ga2O3 film is determined by electron dispersive X-ray spectroscopy. The X-ray photoelectron spectroscopy peak ratio of oxygen over gallium decreases with increasing Si content. It is concluded that Si substitutes for the Ga sites in the β-Ga2O3 film.