Enhanced Current Spreading for GaN-Based Side-View LEDs by Adding an Metallic Stripe Across the Long Side of the Chip

The authors propose a simple method to enhance current spreading of GaN-based side-view light-emitting diodes (LEDs) by adding a metallic stripe across the long side of the chip. It was found that 20 mA output power of the LED could be enhanced from 8.54 to 9.2 mW by adding the metallic stripe. It w...

Full description

Saved in:
Bibliographic Details
Published inIEEE photonics technology letters Vol. 24; no. 16; pp. 1412 - 1414
Main Authors Chang, L. M., Shoou-Jinn Chang, Jiao, Z. Y., Shen, C. F., Ko, T., Hon, S. J., Chiou, Y., Chiou, H. Y.
Format Journal Article
LanguageEnglish
Published IEEE 15.08.2012
Subjects
Current spreading
Gallium nitride
GaN
Gold
Light emitting diodes
metallic wire
Power generation
Proximity effects
Resistance
side-view LEDs
Wires
Online AccessGet full text

Cover

More Information
Summary:The authors propose a simple method to enhance current spreading of GaN-based side-view light-emitting diodes (LEDs) by adding a metallic stripe across the long side of the chip. It was found that 20 mA output power of the LED could be enhanced from 8.54 to 9.2 mW by adding the metallic stripe. It was also found that further the LED output power could be enhanced to 9.68 mW by partially thinning down the metallic stripe chemically. These improvements could be attributed to the more uniform current distribution across the LED chip.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2012.2205236