Enhanced Performance of LEDs Using Periodic Tent-Like Post Patterns on A-plane Sapphire Substrates

Periodic tent-like post patterns on a-plane sapphire substrates were fabricated using a two-step etching process. They were denoted as a-plane dot pattern sapphire substrate (ADPSS). Compared with the GaN-based light-emitting diode (LED) grown on a-plane sapphire without any pattern (AFlat), the ADP...

Full description

Saved in:
Bibliographic Details
Published inIEEE photonics technology letters Vol. 23; no. 23; pp. 1772 - 1774
Main Authors Bo-Wen Lin, Chung-Cheng Chang, Cheng-Yu Hsieh, Bau-Ming Wang, Wu, YewChung Sermon, Wen-Ching Hsu
Format Journal Article
LanguageEnglish
Published IEEE 01.12.2011
Subjects
A-plane
Arrays
Crystals
Epitaxial growth
Gallium nitride
Light emitting diodes
light-emitting diode (LED)
Power generation
sapphire
Substrates
Online AccessGet full text

Cover

More Information
Summary:Periodic tent-like post patterns on a-plane sapphire substrates were fabricated using a two-step etching process. They were denoted as a-plane dot pattern sapphire substrate (ADPSS). Compared with the GaN-based light-emitting diode (LED) grown on a-plane sapphire without any pattern (AFlat), the ADPSS-LED has higher output power, light extraction efficiency (LEE), and external quantum efficiency (EQE), and better crystal quality. The output power of ADPSS-LED was 9.6 mW, which was 68.4% larger than the AFlat-LED. In addition, the blue shift of ADPSS-LED was found to be less than that of AFlat-LED.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2011.2167677