Leakage Current Characteristics of Nitride-Based InGaN Light-Emitting Diode

Leakage current characteristics have been investigated for nitride-based InGaN light-emitting diodes (LEDs) with different levels of Si-doping conditions applied to the n-type InGaN/GaN layer. The tested LED samples had an emission wavelength of 445 nm. Based on the analysis of temperature-dependent...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 23; no. 8; pp. 483 - 485
Main Authors Kyu-Sang Kim, Jin-Ha Kim, Cho, S N
Format Journal Article
LanguageEnglish
Published IEEE 15.04.2011
Subjects
Doping
Electric fields
Gallium nitride
Leakage current
leakage currents
Light emitting diodes
Light-emitting diodes (LEDs)
Silicon
Temperature measurement
tunneling
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Summary:Leakage current characteristics have been investigated for nitride-based InGaN light-emitting diodes (LEDs) with different levels of Si-doping conditions applied to the n-type InGaN/GaN layer. The tested LED samples had an emission wavelength of 445 nm. Based on the analysis of temperature-dependent characteristics measurements, the reverse leakage current, I R , was predominantly influenced by the lowering of Poole-Frenkel (PF) barrier for low electric field (<;2.5 × 10 6 V/cm) and, for high electric field region (>;8 × 10 7 V/cm), phonon-assisted tunneling (PAT) dominates the I R mechanism. The I R is influenced by the Si-doping density of InGaN/GaN layer that may be present near the end of depletion regions of tested samples.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2011.2109705