Leakage Current Characteristics of Nitride-Based InGaN Light-Emitting Diode
Leakage current characteristics have been investigated for nitride-based InGaN light-emitting diodes (LEDs) with different levels of Si-doping conditions applied to the n-type InGaN/GaN layer. The tested LED samples had an emission wavelength of 445 nm. Based on the analysis of temperature-dependent...
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Published in | IEEE photonics technology letters Vol. 23; no. 8; pp. 483 - 485 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
IEEE
15.04.2011
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Subjects | |
Online Access | Get full text |
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Summary: | Leakage current characteristics have been investigated for nitride-based InGaN light-emitting diodes (LEDs) with different levels of Si-doping conditions applied to the n-type InGaN/GaN layer. The tested LED samples had an emission wavelength of 445 nm. Based on the analysis of temperature-dependent characteristics measurements, the reverse leakage current, I R , was predominantly influenced by the lowering of Poole-Frenkel (PF) barrier for low electric field (<;2.5 × 10 6 V/cm) and, for high electric field region (>;8 × 10 7 V/cm), phonon-assisted tunneling (PAT) dominates the I R mechanism. The I R is influenced by the Si-doping density of InGaN/GaN layer that may be present near the end of depletion regions of tested samples. |
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ISSN: | 1041-1135 1941-0174 |
DOI: | 10.1109/LPT.2011.2109705 |