Pulse Broadening in Quantum-Dot Mode-Locked Semiconductor Lasers: Simulation, Analysis, and Experiments

We consider a mode-locked (ML) quantum-dot (QD) edge-emitting semiconductor laser consisting of a reverse-biased saturable absorber and a forward-biased amplifying section. To describe the dynamics of this laser, we use the traveling wave model taking into account carrier exchange processes between...

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Bibliographic Details
Published inIEEE journal of quantum electronics Vol. 47; no. 7; pp. 935 - 943
Main Authors Radziunas, M, Vladimirov, A G, Viktorov, E A, Fiol, G, Schmeckebier, H, Bimberg, D
Format Journal Article
LanguageEnglish
Published IEEE 01.07.2011
Subjects
Equations
Laser mode locking
Laser theory
Mathematical model
Mode-locking
pulse broadening
Quantum dot lasers
quantum dots
saturable absorber
semiconductor laser
trailing edge
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Summary:We consider a mode-locked (ML) quantum-dot (QD) edge-emitting semiconductor laser consisting of a reverse-biased saturable absorber and a forward-biased amplifying section. To describe the dynamics of this laser, we use the traveling wave model taking into account carrier exchange processes between a reservoir and the QDs. A comprehensive parameter study is presented and an analysis of mode-locking pulse broadening with an increase of injection current is performed. The results of our theoretical analysis are supported by experimental data demonstrating a strong pulse asymmetry in a monolithic two-section QD laser.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2011.2142294