A Bandgap-Engineered Silicon-Germanium Biristor for Low-Voltage Operation

A bandgap-engineered silicon-germanium biristor for low-voltage operation is investigated through numerical simulations. A reduced latch-up voltage is achieved using germanium as a base, and improved hysteresis is attained by adopting a hetero-bandgap structure which harnesses the silicon-germanium...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 61; no. 1; pp. 2 - 7
Main Authors Moon, Joon-Bae, Moon, Dong-Il, Choi, Yang-Kyu
Format Journal Article
LanguageEnglish
Published IEEE 01.01.2014
Subjects
Band offset
bandgap-engineering
biristor
bistable resistor
Electric breakdown
Germanium
germanium (Ge)
heterogeneous bandgap
Junctions
Mathematical model
open-base breakdown
Photonic band gap
Silicon
silicon-germanium
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Summary:A bandgap-engineered silicon-germanium biristor for low-voltage operation is investigated through numerical simulations. A reduced latch-up voltage is achieved using germanium as a base, and improved hysteresis is attained by adopting a hetero-bandgap structure which harnesses the silicon-germanium composite at the collector/emitter. The geometric parameters of the base length and base diameter are optimized. The proposed device shows a much lower latch-up voltage than a pure-silicon biristor and larger hysteresis than a pure-germanium biristor. Thus, the proposed bandgap-engineered silicon-germanium biristor is preferable for low-voltage operations.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2013.2288272