Influence of Skin Effect on the Current Distribution of Grounded-Gate NMOS Device

For the first time, the influence of fast pulse induced skin effect on the current distribution inside the grounded-gate NMOS (GGNMOS) is reported. The skin effect results in the current crowding at the finger edges of the GGNMOS, leading to the high photoemission and high substrate potential at tho...

Full description

Saved in:
Bibliographic Details
Published inIEEE electron device letters Vol. 38; no. 11; pp. 1583 - 1585
Main Authors Jian-Hsing Lee, Iyer, Natarajan Mahadeva, Haojun Zhang
Format Journal Article
LanguageEnglish
Published IEEE 01.11.2017
Subjects
Current distribution
electromagnetic (EM) field
Electrostatic discharge (ESD)
Electrostatic discharges
Sensors
Skin effect
Substrates
Transient analysis
Transistors
Online AccessGet full text

Cover

More Information
Summary:For the first time, the influence of fast pulse induced skin effect on the current distribution inside the grounded-gate NMOS (GGNMOS) is reported. The skin effect results in the current crowding at the finger edges of the GGNMOS, leading to the high photoemission and high substrate potential at those regions. This report comprehensively explains some of the decades-old unexplained physical phenomena.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2751418