Electron-electron Interactions in Highly Doped Heterojunction

• Published in: Physics procedia Vol. 71; pp. 359 - 363
• Main Authors: Bukhenskyy, K.V., Dubois, A.B., Gordova, T.V., Kucheryavyy, S.I., Mashnina, S.N., Safoshkin, A.S.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 2015
• Subjects: electron-electron interactions; random-phase approximations; screening potentional; random-phase approximations; screening potentional; electron-electron interactions
• ISSN: 1875-3892; 1875-3892
• DOI: 10.1016/j.phpro.2015.08.352

We report results from calculations of temperature-dependent intra and intersubband electron-electron scattering rates in two subbands in a two-dimentional (2D) quantum structure in Random Phase Approximations (RPA). Electron-electron interactions in a single highly doped heterojunction are considered taking into account both intra- and intersubband transitions. Expressions are derived for the time of electron-electron interaction, matrix elements of the full screening potential and dynamic dielectric function in a 2D electron system with the fine structure of the energy spectrum, and for the electron density spatial distribution. The theoretical dependences provide a good description of the experimental times of Landau levels collisional broadening.