Analysis and Modeling of Program Disturbance by Hot Carrier Injection in 3D NAND Flash Memory Using TCAD

In this paper, we analyzed and modeled the program disturbance caused by hot carrier injection(HCI) in 3D NAND flash memory. HCI in 3D NAND occurs by band-to-band tunneling(BTBT) due to large electric field near the programming cell in the inhibited string. The dependency of HCI on electric field wa...

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Bibliographic Details
Published inJournal of semiconductor technology and science Vol. 19; no. 6; pp. 571 - 576
Main Authors Lee, Yongmin, Kim, Sungbak, Shin, Hyungcheol
Format Journal Article
LanguageEnglish
Published 대한전자공학회 01.12.2019
Subjects
전기공학
natural local self boosting(NLSB)
band-to-band tunneling(BTBT)
3D NAND flash memory
hot carrier
program disturbance
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ISSN1598-1657
2233-4866
DOI10.5573/JSTS.2019.19.6.571

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Summary:In this paper, we analyzed and modeled the program disturbance caused by hot carrier injection(HCI) in 3D NAND flash memory. HCI in 3D NAND occurs by band-to-band tunneling(BTBT) due to large electric field near the programming cell in the inhibited string. The dependency of HCI on electric field was confirmed at various bias conditions. Also, HCI modeling was done by calculating the exact electric field considering the change of channel potential over time due to BTBT. KCI Citation Count: 0
ISSN:1598-1657
2233-4866
DOI:10.5573/JSTS.2019.19.6.571