A Si/GaN-based Synchronous Boost DC-DC Converter with High Speed and High Accuracy Peak Current Control Unit

• Published in: Journal of semiconductor technology and science Vol. 17; no. 6; pp. 771 - 785
• Main Authors: Tang, Shengpeng, Gu, Donglie, Meng, Xianzhi, Sun, Kexu, Xi, Jianxiong, He, Lenian
• Format: Journal Article
• Language: English
• Published: 대한전자공학회 01.12.2017
• Subjects: 전기공학; Peak current mode (PCM); switching frequency; high accuracy; boost DC-DC converter; high speed; peak current control unit (PCCU)
• ISSN: 1598-1657; 2233-4866
• DOI: 10.5573/JSTS.2017.17.6.771

A 3 MHz Si/ 5 MHz GaN-based 48 W boost converter with high speed and high accuracy Peak Current Control Unit (PCCU) is presented. Compared with the conventional Peak Current Mode (PCM) controllers, the boost controller IC adopts a novel PCCU consisting of a fully differential open-loop operational transconductance amplifier (OTA) and a transimpedance amplifier (TIA), which can minimize the feedforward delay and enable the converter to operate at a higher switching frequency. As a result, the dynamic response and peak current accuracy of the converter are improved. In addition, the compensated output of error amplifier in PCCU is moved forward to raise the control accuracy further. This IC is designed in CSMC 0.8 um 60 V BCD process. The post-layout simulation shows that the boost converter with the proposed PCCU can shorten the feedforward delay to 28.01 ns and behave much better than the conventional one in dynamic response as well as peak current accuracy. The proposed converter can operate at 3/5 MHz well with wide duty cycle ranging from 0.167 to 0.750. The maximum line regulation and output regulation is less than 9.6 mV/V and 6.72 mV/V, respectively. KCI Citation Count: 0