Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate

An optically triggered nonvolatile memory based on platinum nano-particles embedded within a SiO2 and HfO2 dielectric stack on a silicon on insulator (SOI) substrate is presented. The memory cell exhibits a very wide spectral response, from 220 nm to 950 nm; much wider than common photo-detectors fa...

Full description

Saved in:
Bibliographic Details
Published inJournal of applied physics Vol. 113; no. 7
Main Authors Mikhelashvili, V., Meyler, B., Shneider, Y., Yofis, S., Salzman, J., Atiya, G., Cohen-Hyams, T., Ankonina, G., Kaplan, W. D., Lisiansky, M., Roizin, Y., Eisenstein, G.
Format Journal Article
LanguageEnglish
Published 21.02.2013
Subjects
Dielectrics
Electric potential
Hysteresis
Insulators
Nanomaterials
Nanostructure
Silicon substrates
Voltage
Online AccessGet full text

Cover

More Information
Summary:An optically triggered nonvolatile memory based on platinum nano-particles embedded within a SiO2 and HfO2 dielectric stack on a silicon on insulator (SOI) substrate is presented. The memory cell exhibits a very wide spectral response, from 220 nm to 950 nm; much wider than common photo-detectors fabricated on SOI. It offers several functionalities including a low programming voltage and wide hysteresis of the capacitance-voltage characteristics, an illumination and voltage sweep amplitude dependent hysteresis of the current-voltage characteristics, and plasmonic enhanced, efficient broad-band photo detection.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4791761