A method to restrain the charging effect on an insulating substrate in high energy electron beam lithography

Pattern distortions caused by the charging effect should be reduced while using the electron beam lithography process on an insulating substrate. We have developed a novel process by using the SX AR-PC 5000/90.1solution as a spin-coated conductive layer, to help to fabricate nanoscale patterns of po...

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Bibliographic Details
Published inJournal of semiconductors Vol. 35; no. 12; pp. 144 - 149
Main Author 于明岩 赵士瑞 景玉鹏 施云波 陈宝钦
Format Journal Article
LanguageEnglish
Published 01.12.2014
Subjects
Charging
Devices
Distortion
Electron beam lithography
Electron beams
Resists
Semiconductors
Stitching
充电效应
光刻工艺
半导体工艺
液晶显示屏
电子束光刻
绝缘基板
聚甲基丙烯酸甲酯
高能量
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Summary:Pattern distortions caused by the charging effect should be reduced while using the electron beam lithography process on an insulating substrate. We have developed a novel process by using the SX AR-PC 5000/90.1solution as a spin-coated conductive layer, to help to fabricate nanoscale patterns of poly-methyl-methacrylate polymer resist on glass for phased array device application. This method can restrain the influence of the charging effect on the insulating substrate effectively. Experimental results show that the novel process can solve the problems of the distortion of resist patterns and electron beam main field stitching error, thus ensuring the accuracy of the stitching and overlay of the electron beam lithography system. The main characteristic of the novel process is that it is compatible to the multi-layer semiconductor process inside a clean room, and is a green process, quite simple, fast, and low cost. It can also provide a broad scope in the device development on insulating the substrate,such as high density biochips, flexible electronics and liquid crystal display screens.
Bibliography:charging effect; pattern distortions; electron beam lithography
Pattern distortions caused by the charging effect should be reduced while using the electron beam lithography process on an insulating substrate. We have developed a novel process by using the SX AR-PC 5000/90.1solution as a spin-coated conductive layer, to help to fabricate nanoscale patterns of poly-methyl-methacrylate polymer resist on glass for phased array device application. This method can restrain the influence of the charging effect on the insulating substrate effectively. Experimental results show that the novel process can solve the problems of the distortion of resist patterns and electron beam main field stitching error, thus ensuring the accuracy of the stitching and overlay of the electron beam lithography system. The main characteristic of the novel process is that it is compatible to the multi-layer semiconductor process inside a clean room, and is a green process, quite simple, fast, and low cost. It can also provide a broad scope in the device development on insulating the substrate,such as high density biochips, flexible electronics and liquid crystal display screens.
Yu Mingyan,Zhao Shirui,Jing Yupeng,Shi Yunbo,Chen Baoqin（1 The Higher Educational Key Laboratory for Measuring ＆ Control Technology and Instrumentations of Heilongjiang Province, Harbin University of Science and Technology, Harbin 150080, China ;2Key Laboratory of Microelectronics Devices ＆ Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China）
11-5781/TN
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/35/12/126002