On substrate dopant engineering for ET-SOI MOSFETs with UT-BOX

The importance ofsubstrate doping engineering for extremely thin SOI MOSFETs with ultra-thin buried oxide （ES-UB-MOSFETs） is demonstrated by simulation. A new substrate/backgate doping engineering, lateral non-uniform dopant distributions （LNDD） is investigated in ES-UB-MOSFETs. The effects of LNDD...

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Published inJournal of semiconductors Vol. 35; no. 11; pp. 64 - 69
Main Author 吴昊 许淼 万光星 朱慧珑 赵利川 童小东 赵超 陈大鹏 叶甜春
Format Journal Article
LanguageEnglish
Published 01.11.2014
Subjects
Channels
Devices
Dopants
Doping
MOSFET
MOSFETs
Oxides
RDF
Semiconductors
Simulation
基板
工程
掺杂分布
沟道迁移率
短沟道效应
载流子迁移率
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Summary:The importance ofsubstrate doping engineering for extremely thin SOI MOSFETs with ultra-thin buried oxide （ES-UB-MOSFETs） is demonstrated by simulation. A new substrate/backgate doping engineering, lateral non-uniform dopant distributions （LNDD） is investigated in ES-UB-MOSFETs. The effects of LNDD on device performance, Vt-roll-off, channel mobility and random dopant fluctuation （RDF） are studied and optimized. Fixing the long channel threshold voltage （Vt） at 0.3 V, ES-UB-MOSFETs with lateral uniform doping in the substrate and forward back bias can scale only to 35 nm, meanwhile LNDD enables ES-UB-MOSFETs to scale to a 20 nm gate length, which is 43% smaller. The LNDD degradation is 10% of the carrier mobility both for nMOS and pMOS, but it is canceled out by a good short channel effect controlled by the LNDD. Fixing Vt at 0.3 V, in long channel devices, due to more channel doping concentration for the LNDD technique, the RDF in LNDD controlled ES-UB-MOSFETs is worse than in back-bias controlled ES-UB-MOSFETs, but in the short channel, the RDF for LNDD controlled ES-UB-MOSFET is better due to its self-adaption of substrate doping engineering by using a fixed thickness inner-spacer. A novel process flow to form LNDD is proposed and simulated.
Bibliography:extremely thin SOl （ETSOI）; fully depleted SOI （FDSOI）; short channel effect ultra thin BOX （UT- BOX）
Wu Hao, Xu Miao, Wan Guangxing, Zhu Huilong, Zhao Lichuan, Tong Xiaodong, Zhao Chao, Chen Dapeng, Ye Tianchun（Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China）
The importance ofsubstrate doping engineering for extremely thin SOI MOSFETs with ultra-thin buried oxide （ES-UB-MOSFETs） is demonstrated by simulation. A new substrate/backgate doping engineering, lateral non-uniform dopant distributions （LNDD） is investigated in ES-UB-MOSFETs. The effects of LNDD on device performance, Vt-roll-off, channel mobility and random dopant fluctuation （RDF） are studied and optimized. Fixing the long channel threshold voltage （Vt） at 0.3 V, ES-UB-MOSFETs with lateral uniform doping in the substrate and forward back bias can scale only to 35 nm, meanwhile LNDD enables ES-UB-MOSFETs to scale to a 20 nm gate length, which is 43% smaller. The LNDD degradation is 10% of the carrier mobility both for nMOS and pMOS, but it is canceled out by a good short channel effect controlled by the LNDD. Fixing Vt at 0.3 V, in long channel devices, due to more channel doping concentration for the LNDD technique, the RDF in LNDD controlled ES-UB-MOSFETs is worse than in back-bias controlled ES-UB-MOSFETs, but in the short channel, the RDF for LNDD controlled ES-UB-MOSFET is better due to its self-adaption of substrate doping engineering by using a fixed thickness inner-spacer. A novel process flow to form LNDD is proposed and simulated.
11-5781/TN
ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:1674-4926
DOI:10.1088/1674-4926/35/11/114006