Characterization of GaN Grown on SiC on Si/SiO2/Si by Metalorganic Chemical Vapor Deposition

• Published in: Journal of materials research Vol. 14; no. 4; pp. 1171 - 1174
• Main Authors: Zhou, W. L., Namavar, F., Colter, P. C., Yoganathan, M., Leksono, M. W., Pankove, J. I.
• Format: Journal Article
• Language: English
• Published: New York, USA Cambridge University Press 01.04.1999
• ISSN: 0884-2914; 2044-5326
• DOI: 10.1557/JMR.1999.0155

SiC (3C-SiC) was grown on the top Si layer of SIMOX (Si/SiO2/Si) by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on the SiC by metalorganic (MO) CVD to produce a GaN/SiC/Si/SiO2/Si multilayer structure. This multilayer film was investigated by conventional transmission electron microscopy (TEM) and high-resolution (HR) TEM from cross-sectional view. The GaN layer was found to consist of predominately hexagonal gallium nitride (h-GaN), and a small fraction of cubic GaN (c-GaN) crystallites. The orientation relationship between most of the h-GaN grains and SiC (3C-SiC) was found to be (0001)Ga N||s(111)SiC; [1120]GaN||[110]SiC, while most of the c-GaN grains had an orientation relationship (001)GaN||(001)SiC; [110]GaN||[110]SiC with respect to 3C-SiC substrate. The hexagonal grains of GaN were found to grow as two variants. The defects in both h-GaN and c-GaN are also discussed.