A novel multiple super junction power device structure with low specific on-resistance
A novel multiple super junction （MS J） LDMOS power device is proposed to decrease Ron due to lateral and vertical interactions between the N-pillar and P-pillar. In the studied device： multiple layers of SJ are introduced oppositely under surface S J; when compared with 2D-depleting of the conventio...
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| Published in | Journal of semiconductors Vol. 35; no. 10; pp. 51 - 55 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.10.2014
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/35/10/104006 |
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| Abstract | A novel multiple super junction （MS J） LDMOS power device is proposed to decrease Ron due to lateral and vertical interactions between the N-pillar and P-pillar. In the studied device： multiple layers of SJ are introduced oppositely under surface S J; when compared with 2D-depleting of the conventional super junction （CSJ）, a 3D- depleted effect is formed in the MSJ thanks to vertical electric field modulation; and, current distribution is improved by deep drain, which increases the drift doping concentration and results in a lower on-resistance. The high electric field around the drain region by substrate-assisted depleted effect is reduced due to the charge balance result from the electric field shielding effect of the bottom S J, which causes the uniform electric field in the drift region and the high breakdown voltage. The numerical simulation results indicate that the specific on-resistance of the MSJ device is reduced by 42% compared with that of CSJ device, while maintaining a high breakdown voltage; the cell pitch of the device is 12 μm. |
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| AbstractList | A novel multiple super junction （MS J） LDMOS power device is proposed to decrease Ron due to lateral and vertical interactions between the N-pillar and P-pillar. In the studied device： multiple layers of SJ are introduced oppositely under surface S J; when compared with 2D-depleting of the conventional super junction （CSJ）, a 3D- depleted effect is formed in the MSJ thanks to vertical electric field modulation; and, current distribution is improved by deep drain, which increases the drift doping concentration and results in a lower on-resistance. The high electric field around the drain region by substrate-assisted depleted effect is reduced due to the charge balance result from the electric field shielding effect of the bottom S J, which causes the uniform electric field in the drift region and the high breakdown voltage. The numerical simulation results indicate that the specific on-resistance of the MSJ device is reduced by 42% compared with that of CSJ device, while maintaining a high breakdown voltage; the cell pitch of the device is 12 μm. A novel multiple super junction (MSJ) LDMOS power device is proposed to decrease R sub(on) due to lateral and vertical interactions between the N-pillar and P-pillar. In the studied device: multiple layers of SJ are introduced oppositely under surface SJ; when compared with 2D-depleting of the conventional super junction (CSJ), a 3D-depleted effect is formed in the MSJ thanks to vertical electric field modulation; and, current distribution is improved by deep drain, which increases the drift doping concentration and results in a lower on-resistance. The high electric field around the drain region by substrate-assisted depleted effect is reduced due to the charge balance result from the electric field shielding effect of the bottom SJ, which causes the uniform electric field in the drift region and the high breakdown voltage. The numerical simulation results indicate that the specific on-resistance of the MSJ device is reduced by 42% compared with that of CSJ device, while maintaining a high breakdown voltage; the cell pitch of the device is 12 [mu]m. |
| Author | 朱辉 李海鸥 李琦 黄远豪 徐晓宁 赵海亮 |
| AuthorAffiliation | Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Cites_doi | 10.1109/TED.2003.813460 10.1109/TED.2005.848093 10.1109/TED.2006.877007 10.1109/LED.2009.2023541 |
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| Notes | Zhu Hui,Li Haiou, Li Qi, Huang Yuanhao, Xu Xiaoning,Zhao Hailiang（ 1 Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China 2 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China） A novel multiple super junction （MS J） LDMOS power device is proposed to decrease Ron due to lateral and vertical interactions between the N-pillar and P-pillar. In the studied device： multiple layers of SJ are introduced oppositely under surface S J; when compared with 2D-depleting of the conventional super junction （CSJ）, a 3D- depleted effect is formed in the MSJ thanks to vertical electric field modulation; and, current distribution is improved by deep drain, which increases the drift doping concentration and results in a lower on-resistance. The high electric field around the drain region by substrate-assisted depleted effect is reduced due to the charge balance result from the electric field shielding effect of the bottom S J, which causes the uniform electric field in the drift region and the high breakdown voltage. The numerical simulation results indicate that the specific on-resistance of the MSJ device is reduced by 42% compared with that of CSJ device, while maintaining a high breakdown voltage; the cell pitch of the device is 12 μm. multiple super junction; 3D-depleted; breakdown voltage; specific on-resistance; electric field shield- ing effect 11-5781/TN ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | Onishi Y (8) 2008 Rub M (1) 2006 2 3 6 7 Duan B X (9) 2007; 28 Chen W J (4) 2007; 28 Wu W (5) 2013; 22 Permthammasin K (10) 2006 |
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| Snippet | A novel multiple super junction （MS J） LDMOS power device is proposed to decrease Ron due to lateral and vertical interactions between the N-pillar and... A novel multiple super junction (MSJ) LDMOS power device is proposed to decrease R sub(on) due to lateral and vertical interactions between the N-pillar and... |
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| StartPage | 51 |
| SubjectTerms | Devices Drains Drift Electric fields Electric potential Electronic devices MOS功率器件 Semiconductors Voltage 击穿电压 器件结构 导通电阻 掺杂浓度 电场调制 电流分布 相互作用 |
| Title | A novel multiple super junction power device structure with low specific on-resistance |
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