A novel multiple super junction power device structure with low specific on-resistance

A novel multiple super junction （MS J） LDMOS power device is proposed to decrease Ron due to lateral and vertical interactions between the N-pillar and P-pillar. In the studied device： multiple layers of SJ are introduced oppositely under surface S J; when compared with 2D-depleting of the conventio...

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Published inJournal of semiconductors Vol. 35; no. 10; pp. 51 - 55
Main Author 朱辉 李海鸥 李琦 黄远豪 徐晓宁 赵海亮
Format Journal Article
LanguageEnglish
Published 01.10.2014
Subjects
Devices
Drains
Drift
Electric fields
Electric potential
Electronic devices
MOS功率器件
Semiconductors
Voltage
击穿电压
器件结构
导通电阻
掺杂浓度
电场调制
电流分布
相互作用
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Summary:A novel multiple super junction （MS J） LDMOS power device is proposed to decrease Ron due to lateral and vertical interactions between the N-pillar and P-pillar. In the studied device： multiple layers of SJ are introduced oppositely under surface S J; when compared with 2D-depleting of the conventional super junction （CSJ）, a 3D- depleted effect is formed in the MSJ thanks to vertical electric field modulation; and, current distribution is improved by deep drain, which increases the drift doping concentration and results in a lower on-resistance. The high electric field around the drain region by substrate-assisted depleted effect is reduced due to the charge balance result from the electric field shielding effect of the bottom S J, which causes the uniform electric field in the drift region and the high breakdown voltage. The numerical simulation results indicate that the specific on-resistance of the MSJ device is reduced by 42% compared with that of CSJ device, while maintaining a high breakdown voltage; the cell pitch of the device is 12 μm.
Bibliography:Zhu Hui,Li Haiou, Li Qi, Huang Yuanhao, Xu Xiaoning,Zhao Hailiang（ 1 Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China 2 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China）
A novel multiple super junction （MS J） LDMOS power device is proposed to decrease Ron due to lateral and vertical interactions between the N-pillar and P-pillar. In the studied device： multiple layers of SJ are introduced oppositely under surface S J; when compared with 2D-depleting of the conventional super junction （CSJ）, a 3D- depleted effect is formed in the MSJ thanks to vertical electric field modulation; and, current distribution is improved by deep drain, which increases the drift doping concentration and results in a lower on-resistance. The high electric field around the drain region by substrate-assisted depleted effect is reduced due to the charge balance result from the electric field shielding effect of the bottom S J, which causes the uniform electric field in the drift region and the high breakdown voltage. The numerical simulation results indicate that the specific on-resistance of the MSJ device is reduced by 42% compared with that of CSJ device, while maintaining a high breakdown voltage; the cell pitch of the device is 12 μm.
multiple super junction; 3D-depleted; breakdown voltage; specific on-resistance; electric field shield- ing effect
11-5781/TN
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/35/10/104006