OC-48 capable InGaAsN vertical cavity lasers

A selectively oxidised InGaAsN/GaAs three quantum well vertical cavity laser (VCSEL) demonstrated continuous wave (CW) lasing with a singlemode output power of 0.749mW at 1266nm. This is the first reported InGaAsN VCSEL capable of meeting the power and wavelength requirements for both OC-48 SR and O...

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Published inElectronics letters Vol. 37; no. 6; pp. 355 - 356
Main Authors Jackson, A.W., Naone, R.L., Dalberth, M.J., Smith, J.M., Malone, K.J., Kisker, D.W., Klem, J.F., Choquette, K.D., Serkland, D.K., Geib, K.M.
Format Journal Article
LanguageEnglish
Published 15.03.2001
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Summary:A selectively oxidised InGaAsN/GaAs three quantum well vertical cavity laser (VCSEL) demonstrated continuous wave (CW) lasing with a singlemode output power of 0.749mW at 1266nm. This is the first reported InGaAsN VCSEL capable of meeting the power and wavelength requirements for both OC-48 SR and OC-48 IR-1 compliant links. The VCSEL uses two low absorption n-type GaAs/AlGaAs distributed Bragg reflectors and a tunnel junction to achieve current injection into the active region. A multimode version of the VCSEL had a output power of 1.43mW at 1.26 mu m. CW lasing continued up to temperatures as high as 107 degree C. The VCSEL material was grown by solid source molecular beam epitaxy with an RF nitrogen plasma source.
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ISSN:0013-5194
DOI:10.1049/el:20010232