孙玲玲, 吕. 王. 林. (2015). Statistical Modeling of Gate Capacitance Variations Induced by Random Dopants in Nanometer MOSFETs Reserving Correlations. Chinese physics letters, 32(10), 159-161. https://doi.org/10.1088/0256-307X/32/10/108502
Chicago Style (17th ed.) Citation孙玲玲, 吕伟锋 王光义 林弥. "Statistical Modeling of Gate Capacitance Variations Induced by Random Dopants in Nanometer MOSFETs Reserving Correlations." Chinese Physics Letters 32, no. 10 (2015): 159-161. https://doi.org/10.1088/0256-307X/32/10/108502.
MLA (9th ed.) Citation孙玲玲, 吕伟锋 王光义 林弥. "Statistical Modeling of Gate Capacitance Variations Induced by Random Dopants in Nanometer MOSFETs Reserving Correlations." Chinese Physics Letters, vol. 32, no. 10, 2015, pp. 159-161, https://doi.org/10.1088/0256-307X/32/10/108502.