Statistical Modeling of Gate Capacitance Variations Induced by Random Dopants in Nanometer MOSFETs Reserving Correlations

We consider intrinsic gate capacitance variations due to random dopants in the nanometer metal oxide semi- conductor field effect transistor （MOSFET） channel. The variations of total gate capacitance and gate transcapacitances are investigated and the strong correlations between the trans-capacitanc...

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Bibliographic Details
Published inChinese physics letters Vol. 32; no. 10; pp. 159 - 161
Main Author 吕伟锋 王光义 林弥 孙玲玲
Format Journal Article
LanguageEnglish
Published 01.10.2015
Subjects
Capacitance
Computer simulation
Correlation
Gates
Metal oxide semiconductors
MOSFET
N-type semiconductors
P-type semiconductors
Semiconductors
掺杂
栅极
电容
纳米
统计建模
金属氧化物半导体场效应晶体管
随机
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/32/10/108502

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Summary:We consider intrinsic gate capacitance variations due to random dopants in the nanometer metal oxide semi- conductor field effect transistor （MOSFET） channel. The variations of total gate capacitance and gate transcapacitances are investigated and the strong correlations between the trans-capacitance variations are discovered. A simple statistical model is proposed for accurately capturing total gate capacitance variability based on the correlations. The model fits very well with the Monte Carlo simulations and the average errors are -0.033% for n-type metal-oxide semiconductor and -0.012% for p-type metal-oxide semiconductor, respectively. Our simulation studies also indicate that, owing to these correlations, the total gate capacitance variability will not dominate in gate capacitance variations.
Bibliography:We consider intrinsic gate capacitance variations due to random dopants in the nanometer metal oxide semi- conductor field effect transistor （MOSFET） channel. The variations of total gate capacitance and gate transcapacitances are investigated and the strong correlations between the trans-capacitance variations are discovered. A simple statistical model is proposed for accurately capturing total gate capacitance variability based on the correlations. The model fits very well with the Monte Carlo simulations and the average errors are -0.033% for n-type metal-oxide semiconductor and -0.012% for p-type metal-oxide semiconductor, respectively. Our simulation studies also indicate that, owing to these correlations, the total gate capacitance variability will not dominate in gate capacitance variations.
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/10/108502