Low level and reflection phase noise measurements on a FET

The residual phase noise of a PHEMT device is studied in two unusual configurations: in transmission mode with a low input microwave power on the device, and in reflection mode. Measurements clearly reveal some fundamental aspects of the phase noise generation in this device: the phase noise is a mo...

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Bibliographic Details
Published inElectronics letters Vol. 37; no. 2; pp. 127 - 129
Main Authors Llopis, O., Juraver, J.B., Cibiel, G., Graffeuil, J.
Format Journal Article
LanguageEnglish
Published 18.01.2001
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Summary:The residual phase noise of a PHEMT device is studied in two unusual configurations: in transmission mode with a low input microwave power on the device, and in reflection mode. Measurements clearly reveal some fundamental aspects of the phase noise generation in this device: the phase noise is a modulation mechanism which still exists in the linear regime and in which the gate reactance fluctuations play an important role.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:0013-5194
DOI:10.1049/el:20010081