Normal-stress Semiconductor Sensor Using a Combined Square-shaped van der Pauw Structure

A combined square-shaped van der Pauw (VDP) sensor is proposed for calculation of the difference of the in-plane normal-stresses in this work. In previous works, two separate measurements were required, which is so inconvenient and tricky, because the different pair of point-contacts were used for 0...

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Bibliographic Details
Published inJournal of semiconductor technology and science Vol. 20; no. 2; pp. 135 - 140
Main Authors Cho, Chun-Hyung, Kim, Jonghoek, Sung, Hyuk-Kee
Format Journal Article
LanguageEnglish
Published 대한전자공학회 01.04.2020
Subjects
전기공학
normal-stress
stress-sensor
Semiconductor sensor
van der Pauw
pressure-senor
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Summary:A combined square-shaped van der Pauw (VDP) sensor is proposed for calculation of the difference of the in-plane normal-stresses in this work. In previous works, two separate measurements were required, which is so inconvenient and tricky, because the different pair of point-contacts were used for 0 and/or 90 degree oriented resistance measurement. This work analytically presented how to resolve these problems by using a combined VDP configuration and compared the in-plane normal-stresses differential sensitivities for the different silicon planes and the coordinate systems (un-primed or primed). Furthermore, we offered another approach using the voltage difference, in which the sensitivity was observed to be linearly proportional to the unstressed value of voltage (= I x R). KCI Citation Count: 0
ISSN:1598-1657
2233-4866
DOI:10.5573/JSTS.2020.20.2.135