Relationship of Free Surface Area with Oxygen Concentration in Silicon Ingot Grown by Czochralski Method for High Efficiency Solar Cells

• Published in: Journal of the Korean Physical Society Vol. 77; no. 11; pp. 940 - 944
• Main Authors: Park, Jun-Seong, Shim, Tae-Hun, Park, Jea-Gun
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Physical Society 01.12.2020; 한국물리학회
• Subjects: Mathematical and Computational Physics; Particle and Nuclear Physics; Physics; Physics and Astronomy; Theoretical; 물리학; Impurities in crystals; Silicon solar cells; Computer simulation of liquid structure
• ISSN: 0374-4884; 1976-8524
• DOI: 10.3938/jkps.77.940

The relationship of free surface area with temperature, power, and oxygen concentration in a silicon ingot grown by Czochralski method for solar cells was investigated by simulating the growing process of 4-, 6-, and 8-inch diameter ingots with a 24-inch quartz crucible. It was confirmed that the temperature at auto-temperature-control (ATC) sensor of 4-inch diameter ingot was higher than 6- and 8-inch diameter ingot due to the longer distance between triple point and ATC sensor, i.e. , larger area of the free surface. In addition, it was observed that the power consumption for growing 4-inch diameter ingot was greater than 6-and 8-inch diameter ingot because of its smaller heat capacity resulted from smaller charge size. In particular, it was confirmed that the oxygen concentration of 4-inch diameter ingot was lower than those of 6- and 8-inch diameter ingots since the larger free surface area and weaker melt convection led to the lower oxygen concentration in 4-inch ingot. This understanding of the relationship of free surface area with oxygen concentration in a silicon ingot can be applicable directly to control oxygen concentration in growing different diameter of silicon ingots.