Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures

The thermally induced redistribution of carriers between quantum well (QW) and quantum dot (QD) layers in a hybrid dot-well system composed of InAs QDs and an InGaAs QW is studied by means of photoluminescence (PL) spectroscopy. This redistribution significantly affects the QD and QW PL intensities...

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Bibliographic Details
Published inJournal of applied physics Vol. 113; no. 3
Main Authors Mazur, Yu. I., Dorogan, V. G., Marega, E., Guzun, D., Ware, M. E., Zhuchenko, Z. Ya, Tarasov, G. G., Lienau, C., Salamo, G. J.
Format Journal Article
LanguageEnglish
Published 21.01.2013
Subjects
Barriers
Carriers
Dynamics
Excitation
Nanostructure
Position (location)
Spacers
Tunnels (transportation)
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Summary:The thermally induced redistribution of carriers between quantum well (QW) and quantum dot (QD) layers in a hybrid dot-well system composed of InAs QDs and an InGaAs QW is studied by means of photoluminescence (PL) spectroscopy. This redistribution significantly affects the QD and QW PL intensities depending both on the dot-well barrier thickness and height. For comparatively thin barriers, the interplay between tunnel and thermal carrier fluxes becomes crucial, governing the exciton dynamics in a tunnel injection dot-well structure at elevated temperatures. For a sufficiently thick spacer, it is shown that exciton localization within the QW, apparently induced by QD strain fields, has a profound influence on the transfer dynamics at low temperatures.
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ISSN:0021-8979
1089-7550
DOI:10.1063/1.4779686