Design of a Single Gate Metal Oxide Semiconductor High Electron Mobility Transistor with a Cavity Under the Gate

This paper presents the impact of dielectric modulation on characteristics for an AlGaN/ GaN heterostructure using 2D Visual TCAD simulation. The paper presents the simulation of a Single Gate MOSHEMT with a cavity under the gate towards biomolecule detection using Visual TCAD to determine the sensi...

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Bibliographic Details
Published in2021 IEEE International Women in Engineering (WIE) Conference on Electrical and Computer Engineering (WIECON-ECE) pp. 113 - 116
Main Authors Dastidar, Ananya, Patra, Tapas Kumar
Format Conference Proceeding
LanguageEnglish
Published IEEE 04.12.2021
Subjects
AlGaN/GaN
Biomolecule
Cavity
HEMTs
Logic gates
Modulation
MOSHEMT
Performance evaluation
Sensitivity
Sensitivity analysis
Threshold voltage
Visual TCAD
Visualization
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Summary:This paper presents the impact of dielectric modulation on characteristics for an AlGaN/ GaN heterostructure using 2D Visual TCAD simulation. The paper presents the simulation of a Single Gate MOSHEMT with a cavity under the gate towards biomolecule detection using Visual TCAD to determine the sensitivity analysis. The maximum drain current and maximum transconductance of the Single gate MOSHEMT with HfO 2 as a gate dielectric is 6.66 \muA/\mum and 5.52 \muS/\mum, respectively. A threshold voltage, maximum drain current, and transconductance variation of 0.21 V, 0.67 \muA/\mum, and 0.33 \muS/\mum respectively have been found with Cholesterol Oxidase neutral biomolecule in the cavity, for the Single Gate with a cavity under the gate.
DOI:10.1109/WIECON-ECE54711.2021.9829646