Analysis of High Temperature Characteristics of Double Gate Feedback Field Effect Transistor

• Published in: Journal of semiconductor technology and science Vol. 24; no. 1; pp. 33 - 40
• Main Authors: Park, Myeongho, Kim, Kichan, Oh, Seungyeon, Cho, Il-Hwan
• Format: Journal Article
• Language: English
• Published: 대한전자공학회 01.02.2024
• Subjects: 전기공학; Field effect transistor; high temperature operation; positive feedback mechanism
• ISSN: 1598-1657; 2233-4866; 2233-4866; 1598-1657
• DOI: 10.5573/JSTS.2024.24.1.33

In this study, we investigate the temperature-dependent behavior of a double-gate feedback field effect transistors (FBFETs) device exhibiting steep switching characteristics across a range of temperatures (300 K to 400 K). We analyze the temperature characteristics using technology computer-aided design (TCAD) simulations. FBFETs are semiconductor devices operating on a positive feedback loop, where electrons and holes in the channel region modulate the energy state of the potential barrier and wall. FBFETs demonstrate excellent subthreshold swing and a high on/off ratio, attributed to the positive feedback phenomenon, resulting in ideal switch characteristics. In the simulation results, it is observed that as the temperature increases, the on-current (ION), off-current (IOFF), and on-voltage (VON) all increase, while the on/off current ratio decreases. Furthermore, the operation at high temperatures can be maintained by adjusting the fixed gate voltage. Through the simulation results, we qualitatively examine the variation in various device parameters with temperature changes in FBFETs and provide a detailed discussion. KCI Citation Count: 0