Electron transport properties of rapidly solidified (GeTe)x(AgSbTe2)1−x pseudobinary thermoelectric compounds

• Published in: Electronic materials letters Vol. 6; no. 4; pp. 181 - 185
• Main Authors: Kim, B. S., Kim, I. H., Lee, J. K., Min, B. K., Oh, M. W., Park, S. D., Lee, H. W., Kim, M. H.
• Format: Journal Article
• Language: English
• Published: Dordrecht Springer Netherlands 01.12.2010; 대한금속·재료학회
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed Matter Physics; Materials Science; Nanotechnology; Nanotechnology and Microengineering; Optical and Electronic Materials; 전자/정보통신공학; electron transport properties; ); thermoelectric materials; AgSbTe; rapid solidification process; GeTe
• ISSN: 1738-8090; 2093-6788
• DOI: 10.3365/eml.2010.12.181

(GeTe) x (AgSbTe 2 ) 1−x (x=80, 85) compounds were fabricated by melting-hot press and RSP-hot press processes. The (GeTe) 85 (AgSbTe 2 ) 15 compound, which composed of mainly crystalline and partly amorphous structures, was produced in part by rapid solidification. X-ray diffraction analysis showed that the (GeTe) x (AgSbTe 2 ) 1−x compounds represented a single phase of GeTe. The electron transport properties were evaluated over the temperature range of RT∼773K, and then systematically changed with compositions x in (GeTe) x (AgSbTe 2 ) 1−x compounds. The maximum Seebeck coefficient was 227 μV/K at 673K in the (GeTe) 80 (AgSbTe 2 ) 20 compounds fabricated by melting and hot-press process. The minimum resistivity was shown in the (GeTe) 85 (AgSbTe 2 ) 15 by melting and hot-press process.