A physics-based electromigration model for advanced interconnects

• Published in: Microelectronics and reliability Vol. 173; p. 115862
• Main Authors: Chen, Wangyong, Yin, Binyu, Cai, Linlin, Wan, Yi
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.10.2025
• Subjects: Electromigration; Interconnect; Physics-based model; Time-to-failure; Electromigration; Interconnect; Physics-based model; Time-to-failure
• ISSN: 0026-2714
• DOI: 10.1016/j.microrel.2025.115862

Electromigration (EM) prediction is becoming more significant for advanced back-end-of-line. In this work, we propose a physics-based EM model to achieve the high-accuracy and high-efficiency assessment for time-to-failure (TTF). The void evolution is considered during the EM degradation which includes the resistivity model, temperature model and activation energy correction model. The proposed model enables to depict the resistance degradation curves over time which agrees well with the experiment data. The influence of dimension, grain size, temperature, and current density on TTF of interconnects can be analyzed by the model, showing a potential application for fast EM prediction in high-density integration, especially for the advanced interconnects. •A physics-based EM model is proposed to achieve the high-accuracy and high-efficiency assessment for time-to-failure (TTF).•The proposed model agrees well with the experiment data.•The influences of dimension, grain size, temperature, and current density on TTF of interconnects are analyzed.•The model shows a potential application for fast EM prediction in advanced interconnects.