Total dose effects on the g–r noise of JFET transistors

Silicon junction field effect transistors（JFETs） have been exposed to Co-（60）-rays to study radiationinduced effects on their dc characteristics and noise. The devices have been irradiated and measured at room temperature up to an accumulated 100 krad（Si） dose of radiation at a dose rate of 0.1 rad（...

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Bibliographic Details
Published inJournal of semiconductors Vol. 37; no. 3; pp. 58 - 60
Main Author 胡为 庄奕琪 包军林 赵启凤
Format Journal Article
LanguageEnglish
Published 01.03.2016
Subjects
Dosage
Irradiation
JFET
Noise
Semiconductor devices
Semiconductors
Silicon junctions
Transistors
噪声
总剂量效应
放射性影响
概率密度
直流特性
结型场效应晶体管
辐射剂量
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Summary:Silicon junction field effect transistors（JFETs） have been exposed to Co-（60）-rays to study radiationinduced effects on their dc characteristics and noise. The devices have been irradiated and measured at room temperature up to an accumulated 100 krad（Si） dose of radiation at a dose rate of 0.1 rad（Si）/s. During irradiation,the generation–recombination（g–r） noise increase has been observed while the dc characteristics of the transistors were kept unchanged. The increasing of the density of the same type point defects and their probability of trapping and detrapping carriers caused by irradiation have been used to explain the g–r noise amplitude increase, while the g–r noise characteristic frequency has only a slight change.
Bibliography:radiation junction field-effect transistors generation–recombination noise
11-5781/TN
Silicon junction field effect transistors（JFETs） have been exposed to Co-（60）-rays to study radiationinduced effects on their dc characteristics and noise. The devices have been irradiated and measured at room temperature up to an accumulated 100 krad（Si） dose of radiation at a dose rate of 0.1 rad（Si）/s. During irradiation,the generation–recombination（g–r） noise increase has been observed while the dc characteristics of the transistors were kept unchanged. The increasing of the density of the same type point defects and their probability of trapping and detrapping carriers caused by irradiation have been used to explain the g–r noise amplitude increase, while the g–r noise characteristic frequency has only a slight change.
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ISSN:1674-4926
DOI:10.1088/1674-4926/37/3/034005