A 4 kb Metal-Fuse OTP-ROM Macro Featuring a 2 V Programmable 1.37 \mu m ^ 1T1R Bit Cell in 32 nm High-k Metal-Gate CMOS
A 4 kb high-density PROM array featuring the first high-volume manufacturable metal-fuse technology in 32 nm high-k metal-gate CMOS is introduced. In contrast to traditional salicided polysilicon based 2-D fuse cells, the metal-fuse technology enables a 3-D cell topology with program device and fuse...
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Published in | IEEE journal of solid-state circuits Vol. 45; no. 4; pp. 863 - 868 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.04.2010
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Subjects | |
Online Access | Get full text |
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Summary: | A 4 kb high-density PROM array featuring the first high-volume manufacturable metal-fuse technology in 32 nm high-k metal-gate CMOS is introduced. In contrast to traditional salicided polysilicon based 2-D fuse cells, the metal-fuse technology enables a 3-D cell topology with program device and fuse element stacked on each other, achieving a 1.37 μm 2 cell footprint. The 128-row by 32-column array with an asymmetric tunable static sense scheme can operate down to 0.5 V and provides multi-bit programming capability. Programming success using a 2 V-1 μs pulse condition is demonstrated. The technology is scalable and maintains full compatibility with modern high-k metal-gate processes. |
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ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/JSSC.2010.2040115 |