A 4 kb Metal-Fuse OTP-ROM Macro Featuring a 2 V Programmable 1.37 \mu m ^ 1T1R Bit Cell in 32 nm High-k Metal-Gate CMOS

A 4 kb high-density PROM array featuring the first high-volume manufacturable metal-fuse technology in 32 nm high-k metal-gate CMOS is introduced. In contrast to traditional salicided polysilicon based 2-D fuse cells, the metal-fuse technology enables a 3-D cell topology with program device and fuse...

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Bibliographic Details
Published inIEEE journal of solid-state circuits Vol. 45; no. 4; pp. 863 - 868
Main Authors Kulkarni, S.H., Zhanping Chen, Jun He, Lei Jiang, Pedersen, M.B., Zhang, K.
Format Journal Article
LanguageEnglish
Published IEEE 01.04.2010
Subjects
Circuit testing
CMOS technology
Fuses
High K dielectric materials
High-density PROM
High-K gate dielectrics
Manufacturing
metal fuse
one-time-programmable ROM (OTP-ROM)
PROM
Read only memory
Silicides
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Summary:A 4 kb high-density PROM array featuring the first high-volume manufacturable metal-fuse technology in 32 nm high-k metal-gate CMOS is introduced. In contrast to traditional salicided polysilicon based 2-D fuse cells, the metal-fuse technology enables a 3-D cell topology with program device and fuse element stacked on each other, achieving a 1.37 μm 2 cell footprint. The 128-row by 32-column array with an asymmetric tunable static sense scheme can operate down to 0.5 V and provides multi-bit programming capability. Programming success using a 2 V-1 μs pulse condition is demonstrated. The technology is scalable and maintains full compatibility with modern high-k metal-gate processes.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2010.2040115