Edge Cut Process for Reducing Ni Content at Channel Edge Region in Metal Induced Lateral Crystallization Poly-Si TFTs

• Published in: Journal of semiconductor technology and science Vol. 16; no. 2; pp. 166 - 171
• Main Authors: SEOK, Ki Hwan, Kim, Hyung Yoon, Park, Jae Hyo, Lee, Sol Kyu, Lee, Yong Hee, Joo, Seung Ki
• Format: Journal Article
• Language: English
• Published: 대한전자공학회 01.04.2016
• Subjects: 전기공학; Polycrystalline silicon (Poly-Si); edge cut (EC); metal induced lateral crystallization (MILC); nickel silicide
• ISSN: 1598-1657; 2233-4866
• DOI: 10.5573/JSTS.2016.16.2.166

Nickel silicide is main issue in Polycrystalline silicon Thin Film Transistor (TFT) which is made by Metal Induced Lateral Crystallization (MILC) method. This Nickel silicide acts as a defect center, and this defect is one of the biggest reason of the high leakage current. In this research, we fabricated polycrystalline TFTs with novel method called Edge Cut (EC). With this new fabrication method, we assumed that nickel silicide at the edge of the channel region is reduced. Electrical properties are measured and trap state density also calculated using Levinson & Proano method KCI Citation Count: 0