Design of broadband class-F power amplifier for multiband LTE handsets applications

A broadband class-F power amplifier for multiband LTE handsets applications is developed across 2.3- 2.7 GHz. The power amplifier maintains constant fundamental impedance at the output matching circuit which is operating for broadband. The nearly zero of second harmonic impedance and nearly infinity...

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Bibliographic Details
Published inJournal of semiconductors Vol. 36; no. 8; pp. 136 - 140
Main Author 郑耀华 章国豪 郑瑞清 李思臻 林俊明 陈思弟
Format Journal Article
LanguageEnglish
Published 01.08.2015
Subjects
Broadband
Circuits
Evolution
Harmonics
HBT工艺
Impedance
InGaP/GaAs
LTE
Matching
Power amplifiers
Semiconductors
多频段
宽带功率放大器
手机应用
设计
谐波阻抗
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ISSN1674-4926
DOI10.1088/1674-4926/36/8/085004

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Summary:A broadband class-F power amplifier for multiband LTE handsets applications is developed across 2.3- 2.7 GHz. The power amplifier maintains constant fundamental impedance at the output matching circuit which is operating for broadband. The nearly zero of second harmonic impedance and nearly infinity of third harmonic impedance are found for highly efficient class-F PA. The harmonic control circuits are immersed into the broad- band output matching for fundamental frequency. For demonstration, the PA is implemented in InGaP/GaAs HBT process, and tested across the frequency range of 2.3-2.7 GHz using a long-term evolution signal. The presented PA delivers good performance of high efficiency and high linearity, which shows that the broadband class-F PA supports the multiband LTE handsets applications.
Bibliography:A broadband class-F power amplifier for multiband LTE handsets applications is developed across 2.3- 2.7 GHz. The power amplifier maintains constant fundamental impedance at the output matching circuit which is operating for broadband. The nearly zero of second harmonic impedance and nearly infinity of third harmonic impedance are found for highly efficient class-F PA. The harmonic control circuits are immersed into the broad- band output matching for fundamental frequency. For demonstration, the PA is implemented in InGaP/GaAs HBT process, and tested across the frequency range of 2.3-2.7 GHz using a long-term evolution signal. The presented PA delivers good performance of high efficiency and high linearity, which shows that the broadband class-F PA supports the multiband LTE handsets applications.
long term evolution （LTE）; power amplifier; broadband; multiband; InGaP/GaAs HBT
Zheng Yaohua Zhang Guohao Zheng Ruiqing, Li Sizhen, Lin Junming, and Chen Sidi（ Guangdong University of Technology, Guangzhou 510006, China）
11-5781/TN
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/36/8/085004