Rapid evaluation method for the normal lifetime of an infrared light-emitting diode
Abstract: Based on the Arrhenius model, a rapid evaluation method for an infrared diode's normal lifetime is proposed, and the theoretical model is constructed. Accelerated life testing of an infrared light-emitting diode (IRLED), which takes less time than usual, is carried out under temperature an...
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Published in | Journal of semiconductors Vol. 34; no. 11; pp. 61 - 64 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
01.11.2013
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Subjects | |
Online Access | Get full text |
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Summary: | Abstract: Based on the Arrhenius model, a rapid evaluation method for an infrared diode's normal lifetime is proposed, and the theoretical model is constructed. Accelerated life testing of an infrared light-emitting diode (IRLED), which takes less time than usual, is carried out under temperature and electric current stress. Using this method, the activation energy and the IRLED's normal lifetime are calculated and analyzed. Key words: Arrhenius model; acceleration lifetime test; IRLED; activation energy |
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Bibliography: | Guo Xiaofeng, Tan Manqing, Wei Xin, Jiao Jian, Guo Wentao, Sun Ningning( Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China) 11-5781/TN Abstract: Based on the Arrhenius model, a rapid evaluation method for an infrared diode's normal lifetime is proposed, and the theoretical model is constructed. Accelerated life testing of an infrared light-emitting diode (IRLED), which takes less time than usual, is carried out under temperature and electric current stress. Using this method, the activation energy and the IRLED's normal lifetime are calculated and analyzed. Key words: Arrhenius model; acceleration lifetime test; IRLED; activation energy ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1674-4926 |
DOI: | 10.1088/1674-4926/34/11/114009 |