Comparative study of transient current induced in SiC p +n and n +p diodes by heavy ion micro beams

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 267; no. 12; pp. 2189 - 2192
• Main Authors: Ohshima, Takeshi, Iwamoto, Naoya, Onoda, Shinobu, Kamiya, Tomihiro, Kawano, Katsuyasu
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.06.2009
• Subjects: Charge Collection Efficiency (CCE); Heavy ion micro beams; n +p and p +n diodes; Silicon carbide (SiC); Transient Ion Beam Induced Current (TIBIC); 71.35.Ee; n +p and p +n diodes; Charge Collection Efficiency (CCE); Transient Ion Beam Induced Current (TIBIC); Heavy ion micro beams; Silicon carbide (SiC); 29.40−n; 29.40.Wk
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/j.nimb.2009.03.056

N +p and p +n diodes were fabricated on p- and n-type 6H–SiC substrates with epitaxial layers, respectively. The charge induced in the diodes by 9 MeV oxygen (O) and nickel (Ni) ions was measured using Transient Ion Beam Induced Current (TIBIC) to clarify the capability of these diodes as particle detectors. As a result of the TIBIC measurements using 9 MeV O, the Charge Collection Efficiency (CCE) of around 83% was obtained for both p +n and n +p diodes. Since the CCE value includes the consumption of incident ion energy in an Al electrode and the n + (p +) region as well as the decay of charge in the measurement system, the CCE value obtained in this study indicates that SiC n +p as well as p +n diodes are suitable for particle detectors. On the other hand, in the case of 9 MeV Ni ion irradiation, the CCE for both n +p and p +n diodes decreases due to the Auger recombination in dense electron–hole pairs.