Comparative study of transient current induced in SiC p +n and n +p diodes by heavy ion micro beams
N +p and p +n diodes were fabricated on p- and n-type 6H–SiC substrates with epitaxial layers, respectively. The charge induced in the diodes by 9 MeV oxygen (O) and nickel (Ni) ions was measured using Transient Ion Beam Induced Current (TIBIC) to clarify the capability of these diodes as particle d...
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Published in | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 267; no. 12; pp. 2189 - 2192 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
15.06.2009
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Subjects | |
Online Access | Get full text |
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Summary: | N
+p and p
+n diodes were fabricated on p- and n-type 6H–SiC substrates with epitaxial layers, respectively. The charge induced in the diodes by 9
MeV oxygen (O) and nickel (Ni) ions was measured using Transient Ion Beam Induced Current (TIBIC) to clarify the capability of these diodes as particle detectors. As a result of the TIBIC measurements using 9
MeV O, the Charge Collection Efficiency (CCE) of around 83% was obtained for both p
+n and n
+p diodes. Since the CCE value includes the consumption of incident ion energy in an Al electrode and the n
+ (p
+) region as well as the decay of charge in the measurement system, the CCE value obtained in this study indicates that SiC n
+p as well as p
+n diodes are suitable for particle detectors. On the other hand, in the case of 9
MeV Ni ion irradiation, the CCE for both n
+p and p
+n diodes decreases due to the Auger recombination in dense electron–hole pairs. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0168-583X 1872-9584 |
DOI: | 10.1016/j.nimb.2009.03.056 |