Skip turn-on of thyristors

A lateral current in an emitter layer of a thyristor (SCR) is shown to vary the lateral field in the base layers and also to change the distribution of the current density injected from the emitter to the base. A method of using lateral emitter layer currents in an SCR to increase the spreading velo...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. ED-13; no. 7; pp. 598 - 604
Main Authors Dodson, W.H., Longini, R.L.
Format Journal Article
LanguageEnglish
Published IEEE 01.07.1966
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Summary:A lateral current in an emitter layer of a thyristor (SCR) is shown to vary the lateral field in the base layers and also to change the distribution of the current density injected from the emitter to the base. A method of using lateral emitter layer currents in an SCR to increase the spreading velocity of the on-region and, at higher currents, to turn on quickly areas of the SCR remote from the gate contact is demonstrated experimentally.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1966.15740