High current gain 4H-SiC bipolar junction transistor

A novel 4H-SiC BJT of high current gain with a suppressing surface traps effect has been proposed. It is effective to improve the current gain due to the lower electrons density in the surface region by extending the emitter metal to overlap the passivation layer on the extrinsic base surface. The e...

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Bibliographic Details
Published inJournal of semiconductors Vol. 37; no. 4; pp. 57 - 60
Main Author 张有润 施金飞 刘影 孙成春 郭飞 张波
Format Journal Article
LanguageEnglish
Published 01.04.2016
Subjects
4H-SiC
BJT
Electron density
Electron recombination
Gain
High current
Oxides
Retarding
Semiconductors
Silicon carbide
双极晶体管
器件性能
外表面
电子密度
电流增益
陷阱效应
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ISSN1674-4926
DOI10.1088/1674-4926/37/4/044005

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Summary:A novel 4H-SiC BJT of high current gain with a suppressing surface traps effect has been proposed. It is effective to improve the current gain due to the lower electrons density in the surface region by extending the emitter metal to overlap the passivation layer on the extrinsic base surface. The electrons trapped in the extrinsic base surface induce the degeneration of Si C BJTs device performance. By modulating the electron recombination rate, the novel structure can increase the current gain to 63.2% compared with conventional ones with the compatible process technology. Optimized sizes are an overlapped metal length of 4 m, as well as an oxide layer thickness of 50 nm.
Bibliography:A novel 4H-SiC BJT of high current gain with a suppressing surface traps effect has been proposed. It is effective to improve the current gain due to the lower electrons density in the surface region by extending the emitter metal to overlap the passivation layer on the extrinsic base surface. The electrons trapped in the extrinsic base surface induce the degeneration of Si C BJTs device performance. By modulating the electron recombination rate, the novel structure can increase the current gain to 63.2% compared with conventional ones with the compatible process technology. Optimized sizes are an overlapped metal length of 4 m, as well as an oxide layer thickness of 50 nm.
4H-SiC bipolar junction transistors（BJTs） current gain electron trap
11-5781/TN
Zhang Yourun, Shi Jinfei, Liu Ying, Sun Chengchun, Guo Fei, Zhang Bo（1. State Key Laboratory of Electronic Thin Film and Integrated Device, Chengdu 610054, China; 2.School of Energy Science and Engineering, Chengdu 610054, China; 3.University of Electronic Science and Technology of China, Chengdu 610054, China）
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ISSN:1674-4926
DOI:10.1088/1674-4926/37/4/044005