Electronic model of a Ferroelectric Field Effect transistor

• Published in: Integrated ferroelectrics Vol. 40; no. 1-5; pp. 55 - 64
• Main Authors: Macleod, Todd C., Ho, Fat Duen
• Format: Journal Article
• Language: English
• Published: Taylor & Francis Group 01.01.2001
• Subjects: ferroelectric transistor; Spice model
• ISSN: 1058-4587; 1607-8489
• DOI: 10.1080/10584580108010829

A pair of electronic models has been developed of a Ferroelectric Field Effect transistor. These models can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The models use the Schmitt trigger circuit as a basis for their design. One model uses bipolar junction transistors and one uses MOSFET's. Each model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current from each model has similar values to an actual FFET that was measured experimentally. The input and output resistance in the models are also similar to that of the FFET. The models are valid for all frequencies below RF levels. Each model can be used to design circuits using FFET's with standard electrical simulation packages. These circuits can be used in designing non-volatile memory circuits and logic circuits and are compatible with all SPICE based circuit analysis programs. The models consist of only standard electrical components, such as BJT's, MOSFET's, diodes, resistors, and capacitors. Each model is compared to the experimental data measured from an actual FFET.