Wavelength-tunable prism-coupled external cavity passively mode-locked quantum-dot laser

A wavelength-tunable mode-locked quantum dot laser using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. A dispersion prism, which has lower optical loss and less spectral narrowing than a blazed grating, is used for wavelength selection a...

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Published inChinese physics B Vol. 24; no. 6; pp. 613 - 616
Main Author 吴艳华 吴剑 金鹏 王飞飞 胡发杰 魏恒 王占国
Format Journal Article
LanguageEnglish
Published 01.06.2015
Subjects
Diffraction gratings
InAs
Injection current
Lasers
Quantum dots
Semiconductors
Spectra
Tuning
Wavelengths
半导体可饱和吸收镜
外腔
棱镜耦合
波长可调
被动锁模
调谐范围
量子点激光器
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/24/6/068103

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Summary:A wavelength-tunable mode-locked quantum dot laser using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. A dispersion prism, which has lower optical loss and less spectral narrowing than a blazed grating, is used for wavelength selection and tuning. A wavelength tuning range of 45.5 nm （from 1137.3 nm to 1182.8 nm） under 140-mA injection current in the passive mode-locked regime is achieved. The maximum average power of 19 mW is obtained at the 1170.3-nm wavelength, corresponding to the single pulse energy of 36.5 pJ.
Bibliography:quantum dot, mode-locked laser, prism-coupled external cavity, tunability
A wavelength-tunable mode-locked quantum dot laser using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. A dispersion prism, which has lower optical loss and less spectral narrowing than a blazed grating, is used for wavelength selection and tuning. A wavelength tuning range of 45.5 nm （from 1137.3 nm to 1182.8 nm） under 140-mA injection current in the passive mode-locked regime is achieved. The maximum average power of 19 mW is obtained at the 1170.3-nm wavelength, corresponding to the single pulse energy of 36.5 pJ.
Wu Yan-Hua, Wu Jian, Jin Peng, Wang Fei-Fei, Hu Fa-Jie, Wei Heng, and Wang Zhan-Guo（ Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China）
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/6/068103