Dependence of the 1/f Noise Characteristics of CMOSFETs on Body Bias in Sub-threshold and Strong Inversion Regions

In this paper, the 1/f noise characteristics of n-channel MOSFET (NMOSFET) and p-channel MOSFET (PMOSFET) are analyzed in depth as a function of body bias. The normalized drain current noise, SID/ID2 showed strong dependence on the body bias in the sub-threshold region for both NMOSFET and PMOSFET,...

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Published inJournal of semiconductor technology and science Vol. 13; no. 6; pp. 655 - 661
Main Authors Kwon, Sung-Kyu, Kwon, Hyuk-Min, Kwak, Ho-Young, Jang, Jae-Hyung, Shin, Jong-Kwan, Hwang, Seon-Man, Sung, Seung-Yong, Lee, Ga-Won, Lee, Song-Jae, Han, In-Shik, Chung, Yi-Sun, Lee, Jung-Hwan, Lee, Hi-Deok
Format Journal Article
LanguageEnglish
Published 대한전자공학회 01.12.2013
Subjects
전기공학
body bias
CMOSFET
NMOSFET
PMOSFET
1/f noise
sub-threshold region
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Summary:In this paper, the 1/f noise characteristics of n-channel MOSFET (NMOSFET) and p-channel MOSFET (PMOSFET) are analyzed in depth as a function of body bias. The normalized drain current noise, SID/ID2 showed strong dependence on the body bias in the sub-threshold region for both NMOSFET and PMOSFET, and NMOSFET showed stronger dependence than PMOSFET on the body bias. On the contrary, both of NMOSFET and PMOSFET do not exhibit the dependence of SID/ID2 on body bias in strong inversion region, although the noise mechanisms of two MOSFETs are different from each other. KCI Citation Count: 0
Bibliography:G704-002163.2013.13.6.018
ISSN:1598-1657
2233-4866
DOI:10.5573/JSTS.2013.13.6.655