Leakage of photocurrent： an alternative view on I-V curves of solar cells

An altemative way is proposed to interpret I-V characteristics of GalnP single-junction solar cells by position-dependent leakage ofphotocurrent. With this approach, the I-V curves of solar cells under non-uniform illumination are well analyzed. The effective spreading resistance is also extracted t...

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Published inJournal of semiconductors Vol. 36; no. 6; pp. 6 - 10
Main Author 周桃飞 熊康林 张敏 刘磊 田飞飞 张志强 顾泓 黄俊 王建峰 董建荣 徐科
Format Journal Article
LanguageEnglish
Published 01.06.2015
Subjects
Electric potential
Illumination
Leakage
Photocurrent
Photovoltaic cells
Semiconductors
Solar cells
Voltage
位置相关
光电流
动态行为
太阳能电池
开路电压
曲线
泄漏
短路电流
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/36/6/062002

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Abstract An altemative way is proposed to interpret I-V characteristics of GalnP single-junction solar cells by position-dependent leakage ofphotocurrent. With this approach, the I-V curves of solar cells under non-uniform illumination are well analyzed. The effective spreading resistance is also extracted to understand the dynamic behavior of between the open-circuit voltage and short-circuit current points. The conditions under which the one- diode model will fail are addressed in detail. These analyses are also applicable for a characterization of the I-V curves with lateral voltage distribution under uniform illumination.
AbstractList An alternative way is proposed to interpret I-V characteristics of GaInP single-junction solar cells by position-dependent leakage of photocurrent. With this approach, the I-V curves of solar cells under non-uniform illumination are well analyzed. The effective spreading resistance is also extracted to understand the dynamic behavior of between the open-circuit voltage and short-circuit current points. The conditions under which the one-diode model will fail are addressed in detail. These analyses are also applicable for a characterization of the I-V curves with lateral voltage distribution under uniform illumination.
An altemative way is proposed to interpret I-V characteristics of GalnP single-junction solar cells by position-dependent leakage ofphotocurrent. With this approach, the I-V curves of solar cells under non-uniform illumination are well analyzed. The effective spreading resistance is also extracted to understand the dynamic behavior of between the open-circuit voltage and short-circuit current points. The conditions under which the one- diode model will fail are addressed in detail. These analyses are also applicable for a characterization of the I-V curves with lateral voltage distribution under uniform illumination.
Author 周桃飞 熊康林 张敏 刘磊 田飞飞 张志强 顾泓 黄俊 王建峰 董建荣 徐科
AuthorAffiliation Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China
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Cites_doi 10.1016/j.solener.2008.09.005
10.1002/0470014008
10.1016/j.solener.2010.03.012
10.1016/j.solener.2011.04.015
10.1063/1.3132827
10.1016/j.solener.2009.08.014
10.1063/1.3095441
10.1063/1.3270532
10.1016/j.solener.2013.03.018
10.1016/j.solener.2013.02.021
10.1063/1.2266161
10.1063/1.4818709
10.1063/1.3327331
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Notes An altemative way is proposed to interpret I-V characteristics of GalnP single-junction solar cells by position-dependent leakage ofphotocurrent. With this approach, the I-V curves of solar cells under non-uniform illumination are well analyzed. The effective spreading resistance is also extracted to understand the dynamic behavior of between the open-circuit voltage and short-circuit current points. The conditions under which the one- diode model will fail are addressed in detail. These analyses are also applicable for a characterization of the I-V curves with lateral voltage distribution under uniform illumination.
11-5781/TN
GalnP single-junction solar cells; I-V characteristics; open-circuit voltage
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References 11
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Liang Jing (8) 2013; 34
Yupeng Xing (7) 2013; 34
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Snippet An altemative way is proposed to interpret I-V characteristics of GalnP single-junction solar cells by position-dependent leakage ofphotocurrent. With this...
An alternative way is proposed to interpret I-V characteristics of GaInP single-junction solar cells by position-dependent leakage of photocurrent. With this...
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SubjectTerms Electric potential
Illumination
Leakage
Photocurrent
Photovoltaic cells
Semiconductors
Solar cells
Voltage
位置相关
光电流
动态行为
太阳能电池
开路电压
曲线
泄漏
短路电流
Title Leakage of photocurrent： an alternative view on I-V curves of solar cells
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