Leakage of photocurrent: an alternative view on I-V curves of solar cells

An altemative way is proposed to interpret I-V characteristics of GalnP single-junction solar cells by position-dependent leakage ofphotocurrent. With this approach, the I-V curves of solar cells under non-uniform illumination are well analyzed. The effective spreading resistance is also extracted t...

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Published inJournal of semiconductors Vol. 36; no. 6; pp. 6 - 10
Main Author 周桃飞 熊康林 张敏 刘磊 田飞飞 张志强 顾泓 黄俊 王建峰 董建荣 徐科
Format Journal Article
LanguageEnglish
Published 01.06.2015
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ISSN1674-4926
DOI10.1088/1674-4926/36/6/062002

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Summary:An altemative way is proposed to interpret I-V characteristics of GalnP single-junction solar cells by position-dependent leakage ofphotocurrent. With this approach, the I-V curves of solar cells under non-uniform illumination are well analyzed. The effective spreading resistance is also extracted to understand the dynamic behavior of between the open-circuit voltage and short-circuit current points. The conditions under which the one- diode model will fail are addressed in detail. These analyses are also applicable for a characterization of the I-V curves with lateral voltage distribution under uniform illumination.
Bibliography:An altemative way is proposed to interpret I-V characteristics of GalnP single-junction solar cells by position-dependent leakage ofphotocurrent. With this approach, the I-V curves of solar cells under non-uniform illumination are well analyzed. The effective spreading resistance is also extracted to understand the dynamic behavior of between the open-circuit voltage and short-circuit current points. The conditions under which the one- diode model will fail are addressed in detail. These analyses are also applicable for a characterization of the I-V curves with lateral voltage distribution under uniform illumination.
11-5781/TN
GalnP single-junction solar cells; I-V characteristics; open-circuit voltage
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SourceType-Scholarly Journals-1
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ISSN:1674-4926
DOI:10.1088/1674-4926/36/6/062002