Extension mechanism of antiphase-boundaries in CuPt B-type ordered GaInP2 and (Al, Ga)InP2 epitaxial layers

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Bibliographic Details
Published inJournal of crystal growth Vol. 205; no. 1-2; pp. 11 - 19
Main Authors TAKEDA, S, KUNO, Y, HOSOI, N, SHIMOYAMA, K
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier 01.08.1999
Subjects
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Structure and morphology; thickness
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Vapor phase epitaxy; growth from vapor phase
Inorganic compounds
Epitaxial layers
Semiconductor materials
Anti-phase boundaries
Ternary compounds
Aluminium phosphides
Crystal growth from vapors
Experimental study
High-resolution methods
Ordered crystals
Gallium phosphides
Indium phosphides
MOVPE method
Growth mechanism
Quaternary compounds
Island structure
TEM
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More Information
ISSN:0022-0248
1873-5002
DOI:10.1016/s0022-0248(99)00230-4