Spatial control based quantum well intermixing in InP/InGaAsP structures using ICP

This paper presents a new method based on spatial controlling in quantum well intermixing in InP/InGaAsP structures using ICP technology.The degree of bandgap energy shift in the same wafer can be controlled flexibly using masks with different duty ratios.With an optimal condition including ICP-RIE...

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Bibliographic Details
Published inJournal of semiconductors Vol. 33; no. 10; pp. 134 - 137
Main Author 赵建宜 郭剑 黄晓东 周宁 刘文
Format Journal Article
LanguageEnglish
Published 01.10.2012
Subjects
CP技术
Deposition
Energy use
Etching
ICP
Indium phosphides
Inductively coupled plasma
InGaAsP
InP
Optimization
Quantum wells
Semiconductors
带隙结构
空间控制
蚀刻深度
量子阱混杂
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ISSN1674-4926
DOI10.1088/1674-4926/33/10/106001

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Summary:This paper presents a new method based on spatial controlling in quantum well intermixing in InP/InGaAsP structures using ICP technology.The degree of bandgap energy shift in the same wafer can be controlled flexibly using masks with different duty ratios.With an optimal condition including ICP-RIE etching depth, SiO_2 deposition,and RTA process,five different degrees of blue-shift with maximum of 75 nm were obtained in the same sample.The result shows that our method is an effective way to fabricate monolithic integration devices, especially in multi-bandgap structures.
Bibliography:inductively coupled plasma; photonic integrated circuits; quantum wells; quantum well intermixing
11-5781/TN
Zhao Jianyi,Guo Jian,Huang Xiaodong,Zhou Ning Liu Wen （1 Wuhan National Laboratory for Optoelectronics,Huazhong University of Science and Technology,College of Optoelectronic Science and Engineering,Wuhan 430074,China 2 Accelink Technologies Company,Ltd,Wuhan 430074,China）
This paper presents a new method based on spatial controlling in quantum well intermixing in InP/InGaAsP structures using ICP technology.The degree of bandgap energy shift in the same wafer can be controlled flexibly using masks with different duty ratios.With an optimal condition including ICP-RIE etching depth, SiO_2 deposition,and RTA process,five different degrees of blue-shift with maximum of 75 nm were obtained in the same sample.The result shows that our method is an effective way to fabricate monolithic integration devices, especially in multi-bandgap structures.
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ISSN:1674-4926
DOI:10.1088/1674-4926/33/10/106001