Application of block diagonal technique to a Hamiltonian matrix in performing spin-splitting calculations for GaN wurtzite materials

• Published in: Journal of the Korean Physical Society Vol. 60; no. 3; pp. 403 - 409
• Main Authors: Chen, Chun-Nan, Chang, Sheng-Hsiung, Su, Wei-Long, Wang, Wan-Tsang, Kao, Hsiu-Fen, Jen, Jen-Yi, Li, Yiming
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Physical Society 01.02.2012; 한국물리학회
• Subjects: Mathematical and Computational Physics; Particle and Nuclear Physics; Physics; Physics and Astronomy; Theoretical; 물리학; Spin splitting; Inversion asymmetry; Wurtzite; GaN; Dresselhaus
• ISSN: 0374-4884; 1976-8524
• DOI: 10.3938/jkps.60.403

The bulk inversion asymmetry (Dresselhaus) terms ( i.e., B 2 , B 1 , and B ′ 1 terms) of wurtzite materials are determined. The 2 × 2 conduction band, 2 × 2 heavy-hole band, 2 × 2 light-hole band, and 2 × 2 crystal-field split-off hole band matrices of wurtzite semiconductors are developed and decoupled by using a block diagonal technique. Importantly, those 2 × 2 block diagonal matrices incorporate not only the interband coupling effect but also the bulk inversion asymmetry effect. Analytical expressions for the conduction and the valence band spin-splitting parameters and energies of GaN wurtzite materials are formulated by solving the block diagonal matrices. The presence of these terms is shown to include the spin-splitting phenomenon.