Physical origin investigation of the flatband voltage roll off for metal-oxide-semiconductor device with high-k/metal gate structure

The physical origin of the flatband voltage (VFB) roll off for a metal-oxide-semiconductor device with high-k/metal gate structure is studied from the viewpoint of energy band alignment at the high-k/Si interface because the thickness of SiO2 interlayer is thin enough to be ignored. The VFB roll off...

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Bibliographic Details
Published inJournal of semiconductors Vol. 36; no. 9; pp. 71 - 74
Main Author 韩锴 王晓磊 王文武
Format Journal Article
LanguageEnglish
Published 01.09.2015
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Summary:The physical origin of the flatband voltage (VFB) roll off for a metal-oxide-semiconductor device with high-k/metal gate structure is studied from the viewpoint of energy band alignment at the high-k/Si interface because the thickness of SiO2 interlayer is thin enough to be ignored. The VFB roll off phenomenon is assigned to associate with the direct electron transfer between high-k and Si substrate. Quantitatively calculated simulation results based on this model are given considering different conditions.
Bibliography:high-k dielectric; band alignment; VFB roll off
11-5781/TN
The physical origin of the flatband voltage (VFB) roll off for a metal-oxide-semiconductor device with high-k/metal gate structure is studied from the viewpoint of energy band alignment at the high-k/Si interface because the thickness of SiO2 interlayer is thin enough to be ignored. The VFB roll off phenomenon is assigned to associate with the direct electron transfer between high-k and Si substrate. Quantitatively calculated simulation results based on this model are given considering different conditions.
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ISSN:1674-4926
DOI:10.1088/1674-4926/36/9/094006