Polarisation dependence of two-photon absorption generated by band-limited amplified spontaneous emission noise in silicon avalanche photodiodes

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Bibliographic Details
Published inElectronics letters Vol. 47; no. 25; pp. 1390 - 1391
Main Authors O'DOWD, J. A, GUO, W. H, FLOOD, E, LYNCH, M, BRADLEY, A. L, KILPER, D. C, DONEGAN, J. F
Format Journal Article
LanguageEnglish
Published Stevenage Institution of Engineering and Technology 08.12.2011
Subjects
Applied sciences
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Nonlinear optics
Optical susceptibility, hyperpolarizability
Optics
Optoelectronic devices
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Non linear optics
Avalanche photodiodes
Optoelectronic device
Dichroism
Silicon
Two photon absorption
Amplified spontaneous emission
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ISSN:0013-5194
1350-911X
DOI:10.1049/el.2011.3317