Investigation of the polysilicon p-i-n diode and diode string as a process compatible and portable ESD protection device

The polysilicon p-i-n diode displays noticeable process compatibility and portability in advanced tech- nologies as an electrostatic-discharge （ESD） protection device. This paper presents the reverse breakdown, current leakage and capacitance characteristics of fabricated polysilicon p-i-n diodes. T...

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Bibliographic Details
Published inJournal of semiconductors Vol. 33; no. 7; pp. 60 - 64
Main Authors Jiang, Yibo, Du, Huan, Han, Zhengsheng
Format Journal Article
LanguageChinese
English
Published 01.07.2012
Subjects
Breakdown
Capacitance
Devices
Diodes
ESD保护器件
PIN二极管
Portability
Semiconductors
Strings
Voltage
便携式
反向击穿电压
多晶硅
电容特性
相容
管串
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Summary:The polysilicon p-i-n diode displays noticeable process compatibility and portability in advanced tech- nologies as an electrostatic-discharge （ESD） protection device. This paper presents the reverse breakdown, current leakage and capacitance characteristics of fabricated polysilicon p-i-n diodes. To evaluate the ESD robustness, the forward and reverse TLP I-V characteristics were measured. The polysilicon p-i-n diode string was also investigated to further reduce capacitance and fulfill the requirements of tunable cut-in or reverse breakdown voltage. Finally, to explain the effects of the device parameters, we analyze and discuss the inherent properties ofpolysilicon p-i-n diodes.
Bibliography:11-5781/TN
polysilicon p-i-n diode; ESD; polysilicon p-i-n diode string
The polysilicon p-i-n diode displays noticeable process compatibility and portability in advanced tech- nologies as an electrostatic-discharge （ESD） protection device. This paper presents the reverse breakdown, current leakage and capacitance characteristics of fabricated polysilicon p-i-n diodes. To evaluate the ESD robustness, the forward and reverse TLP I-V characteristics were measured. The polysilicon p-i-n diode string was also investigated to further reduce capacitance and fulfill the requirements of tunable cut-in or reverse breakdown voltage. Finally, to explain the effects of the device parameters, we analyze and discuss the inherent properties ofpolysilicon p-i-n diodes.
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ISSN:1674-4926
DOI:10.1088/1674-4926/33/7/074009