Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting
Pn junctions based on single crystalline tellurium supersaturated silicon were formed by ion implantation followed by pulsed laser melting（PLM）.P type silicon wafers were implanted with 245 keV ^126Te^＋ to a dose of 2×10^15 ions/cm^2,after a PLM process（248 nm,laser fluence of 0.30 and 0.35 J/cm^2,1...
Saved in:
| Published in | Journal of semiconductors Vol. 34; no. 6; pp. 16 - 20 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.06.2013
|
| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/34/6/063001 |
Cover
Loading…
| Abstract | Pn junctions based on single crystalline tellurium supersaturated silicon were formed by ion implantation followed by pulsed laser melting（PLM）.P type silicon wafers were implanted with 245 keV ^126Te^＋ to a dose of 2×10^15 ions/cm^2,after a PLM process（248 nm,laser fluence of 0.30 and 0.35 J/cm^2,1-5 pulses,duration 30 ns）,an n^＋ type single crystalline tellurium supersaturated silicon layer with high carrier density（highest concentration 4.10×10^19 cm^3,three orders of magnitude larger than the solid solution limit） was formed,it shows high broadband optical absorption from 400 to 2500 nm.Current-voltage measurements were performed on these diodes under dark and one standard sun（AM 1.5）,and good rectification characteristics were observed.For present results,the samples with 4-5 pulses PLM are best. |
|---|---|
| AbstractList | Pn junctions based on single crystalline tellurium supersaturated silicon were formed by ion implantation followed by pulsed laser melting (PLM). P type silicon wafers were implanted with 245 keV super(126)Te super(+) to a dose of 2 x 10 super(15) ions/cm super(2), after a PLM process (248 nm, laser fluence of 0.30 and 0.35 J/cm super(2), 1-5 pulses, duration 30 ns), an n super(+) type single crystalline tellurium supersaturated silicon layer with high carrier density (highest concentration 4.10 x 10 super(19) cm super(-3), three orders of magnitude larger than the solid solution limit) was formed, it shows high broadband optical absorption from 400 to 2500 nm. Current-voltage measurements were performed on these diodes under dark and one standard sun (AM 1.5), and good rectification characteristics were observed. For present results, the samples with 4-5 pulses PLM are best. Pn junctions based on single crystalline tellurium supersaturated silicon were formed by ion implantation followed by pulsed laser melting（PLM）.P type silicon wafers were implanted with 245 keV ^126Te^＋ to a dose of 2×10^15 ions/cm^2,after a PLM process（248 nm,laser fluence of 0.30 and 0.35 J/cm^2,1-5 pulses,duration 30 ns）,an n^＋ type single crystalline tellurium supersaturated silicon layer with high carrier density（highest concentration 4.10×10^19 cm^3,three orders of magnitude larger than the solid solution limit） was formed,it shows high broadband optical absorption from 400 to 2500 nm.Current-voltage measurements were performed on these diodes under dark and one standard sun（AM 1.5）,and good rectification characteristics were observed.For present results,the samples with 4-5 pulses PLM are best. |
| Author | 王熙元 黄永光 刘德伟 朱小宁 崔晓 朱洪亮 |
| AuthorAffiliation | Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences |
| Author_xml | – sequence: 1 fullname: 王熙元 黄永光 刘德伟 朱小宁 崔晓 朱洪亮 |
| BookMark | eNo9kDtPBCEUhSk0cX38BBPsbNblNQyUxvhKTGy0JiwDK4aBEZiYbf3lMlljdW8O5zvknlNwFFO0AFxidIOREBvMe7ZmkvANZRu-QZwihI_A6l8_ARel-C1CUgjKEFqBn4eUR119ijA5WHzcBQtN3peqQ_DRwmpDmLOfR1jmyeai65x1tUPzBm8aNkX4OUezRBS43cMlyo9T0LEecl0KIX03oj1OcyhtC7rYDEcbavvwHBw73eSLv3kG3h_u3-6e1i-vj893ty9rQziqazlYS_pOd05y2STLBy45HRxy1gwWC8EZcUzLnvQcGccY4QIPZDBU6q3A9AxcH3KnnL5mW6oafTHtPB1tmovCjMq-Fz0RzdodrCanUrJ1asp-1HmvMFJL1WqpVC2VKsoUV4eqG3f1x32kuPtqx_2DjDPcdx2hv54LhIw |
| Cites_doi | 10.1007/s00339-004-2676-0 10.1063/1.1667004 10.1016/j.nimb.2010.02.091 10.1103/PhysRevB.82.165201 10.1016/j.mseb.2006.10.002 10.1063/1.3415544 10.1063/1.3567759 10.1063/1.122241 10.1021/cm049029i 10.1063/1.2212051 10.1007/s00339-009-5200-8 10.1063/1.334738 10.3788/CJL201340.0302001 10.1063/1.1358846 10.1063/1.2227629 10.1209/0295-5075/99/46005 10.1007/s00339-009-5462-1 10.1364/OL.30.001773 10.1103/PhysRevLett.108.026401 10.1088/0256-307X/30/3/036101 10.1063/1.3609871 10.1063/1.360468 10.1116/1.2796184 |
| ContentType | Journal Article |
| DBID | 2RA 92L CQIGP W92 ~WA AAYXX CITATION 7SP 7U5 8FD L7M |
| DOI | 10.1088/1674-4926/34/6/063001 |
| DatabaseName | 维普期刊资源整合服务平台 中文科技期刊数据库-CALIS站点 维普中文期刊数据库 中文科技期刊数据库-工程技术 中文科技期刊数据库- 镜像站点 CrossRef Electronics & Communications Abstracts Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
| DatabaseTitle | CrossRef Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts |
| DatabaseTitleList | Solid State and Superconductivity Abstracts |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering Physics |
| DocumentTitleAlternate | Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting |
| EndPage | 20 |
| ExternalDocumentID | 10_1088_1674_4926_34_6_063001 46417552 |
| GroupedDBID | 02O 042 1WK 2B. 2C0 2RA 4.4 5B3 5VR 5VS 7.M 92H 92I 92L 92R 93N AAGCD AAJIO AALHV AATNI ABHWH ACAFW ACGFO ACGFS ACHIP AEFHF AFUIB AFYNE AHSEE AKPSB ALMA_UNASSIGNED_HOLDINGS ASPBG AVWKF AZFZN BBWZM CCEZO CEBXE CHBEP CJUJL CQIGP CRLBU CUBFJ CW9 EBS EDWGO EJD EQZZN FA0 IJHAN IOP IZVLO JCGBZ KNG KOT M45 N5L NS0 NT- NT. PJBAE Q02 RIN RNS ROL RPA RW3 SY9 TCJ TGT W28 W92 ~WA -SI -S~ 5XA 5XJ AAYXX ACARI AERVB AGQPQ AOAED ARNYC CAJEI CITATION Q-- TGMPQ U1G U5S 7SP 7U5 8FD AEINN L7M |
| ID | FETCH-LOGICAL-c260t-9dee275a5f969c26e6d6963df0fecde188642f4a972760cf442681d2dc39ab813 |
| ISSN | 1674-4926 |
| IngestDate | Tue Aug 05 11:31:59 EDT 2025 Tue Jul 01 03:20:28 EDT 2025 Wed Feb 14 10:42:52 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 6 |
| Language | English |
| License | http://iopscience.iop.org/info/page/text-and-data-mining http://iopscience.iop.org/page/copyright |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c260t-9dee275a5f969c26e6d6963df0fecde188642f4a972760cf442681d2dc39ab813 |
| Notes | Pn junctions based on single crystalline tellurium supersaturated silicon were formed by ion implantation followed by pulsed laser melting（PLM）.P type silicon wafers were implanted with 245 keV ^126Te^＋ to a dose of 2×10^15 ions/cm^2,after a PLM process（248 nm,laser fluence of 0.30 and 0.35 J/cm^2,1-5 pulses,duration 30 ns）,an n^＋ type single crystalline tellurium supersaturated silicon layer with high carrier density（highest concentration 4.10×10^19 cm^3,three orders of magnitude larger than the solid solution limit） was formed,it shows high broadband optical absorption from 400 to 2500 nm.Current-voltage measurements were performed on these diodes under dark and one standard sun（AM 1.5）,and good rectification characteristics were observed.For present results,the samples with 4-5 pulses PLM are best. tellurium supersaturated silicon pn junction; strong sub-band-gap optical absorption; ion implantation; pulsed laser melting Wang Xiyuan Huang Yongguang,Liu Dewei,Zhu Xiaoning Cui Xiao,Zhu Hongliang （Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083,China ） 11-5781/TN ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| PQID | 1439778728 |
| PQPubID | 23500 |
| PageCount | 5 |
| ParticipantIDs | proquest_miscellaneous_1439778728 crossref_primary_10_1088_1674_4926_34_6_063001 chongqing_primary_46417552 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2013-06-01 |
| PublicationDateYYYYMMDD | 2013-06-01 |
| PublicationDate_xml | – month: 06 year: 2013 text: 2013-06-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationTitle | Journal of semiconductors |
| PublicationTitleAlternate | Chinese Journal of Semiconductors |
| PublicationYear | 2013 |
| References | 22 23 25 26 Sheehy M A (24) 2004 Shao H (15) 2012; 99 10 11 12 13 Wang Xiyuan (18) 2013; 30 14 16 17 19 1 2 3 4 Hu S (7) 2012; 27 5 6 8 9 Li Ping (20) 2006; 33 21 |
| References_xml | – ident: 4 doi: 10.1007/s00339-004-2676-0 – ident: 3 doi: 10.1063/1.1667004 – ident: 21 doi: 10.1016/j.nimb.2010.02.091 – ident: 16 doi: 10.1103/PhysRevB.82.165201 – ident: 2 doi: 10.1016/j.mseb.2006.10.002 – ident: 9 doi: 10.1063/1.3415544 – ident: 10 doi: 10.1063/1.3567759 – ident: 19 doi: 10.1063/1.122241 – ident: 5 doi: 10.1021/cm049029i – ident: 8 doi: 10.1063/1.2212051 – ident: 14 doi: 10.1007/s00339-009-5200-8 – ident: 25 doi: 10.1063/1.334738 – ident: 17 doi: 10.3788/CJL201340.0302001 – ident: 1 doi: 10.1063/1.1358846 – ident: 12 doi: 10.1063/1.2227629 – start-page: 27 year: 2004 ident: 24 – volume: 99 start-page: 46005 issn: 0295-5075 year: 2012 ident: 15 publication-title: Euro Phys Lett doi: 10.1209/0295-5075/99/46005 – ident: 6 doi: 10.1007/s00339-009-5462-1 – ident: 11 doi: 10.1364/OL.30.001773 – volume: 33 start-page: 1688 issn: 0258-7025 year: 2006 ident: 20 publication-title: Chinese J. Lasers – ident: 26 doi: 10.1103/PhysRevLett.108.026401 – volume: 30 start-page: 036101 issn: 0256-307X year: 2013 ident: 18 publication-title: Chin Phys Lett doi: 10.1088/0256-307X/30/3/036101 – ident: 13 doi: 10.1063/1.3609871 – ident: 22 doi: 10.1063/1.360468 – volume: 27 start-page: 1 year: 2012 ident: 7 publication-title: Semicond Sci Technol – ident: 23 doi: 10.1116/1.2796184 |
| SSID | ssib009883400 ssib051367712 ssib004869572 ssj0067441 ssib016971655 ssib022315920 ssib004377404 ssib017478542 |
| Score | 1.8729309 |
| Snippet | Pn junctions based on single crystalline tellurium supersaturated silicon were formed by ion implantation followed by pulsed laser melting（PLM）.P type silicon... Pn junctions based on single crystalline tellurium supersaturated silicon were formed by ion implantation followed by pulsed laser melting (PLM). P type... |
| SourceID | proquest crossref chongqing |
| SourceType | Aggregation Database Index Database Publisher |
| StartPage | 16 |
| SubjectTerms | Crystal structure PN junctions pn结 Product life cycle Production management Pulsed lasers Semiconductors Silicon Tellurium 单晶 激光熔化 硅片 碲 离子注入 脉冲 过饱和 |
| Title | Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting |
| URI | http://lib.cqvip.com/qk/94689X/201306/46417552.html https://www.proquest.com/docview/1439778728 |
| Volume | 34 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3fb9MwELZgCAkeEAwQGz9kJN6irG1iO84jQqsGKhsPrah4sRLHYUVpEppEaDzyl3N2EifV9jB4iSK7vUi-T3ff2XdnhN6FNAYa4ntu6HHqkjimLte9CFMZkgBcLCehrnf-fM7OVuTTmq6HoxhTXVLHJ_L3jXUl_6NVGAO96irZf9CsFQoD8A76hSdoGJ630vG8rzzUlE8H_Zly5O4KCF9m2KOuEGl2m2brVE0JPE838Yw0xaw2GSAgd8rc-QGOrc2GAyJqEh-3ZRblNgkxy4pfLUstG3CjiQN0W-2crcrq3utd57aVTrkvct1LthiOi752e9PrAUvdiOXTi02zl4b87bIZ_tFtTpiLIvrNidaesoC4uifh2OB2u5eba9bT9P-ajXzxzKU3mnkwjXrHoRcO7z6BhzmKGskYN9c-vxDz1WIhlqfr5V10zwsCc6r_8eJL77hBmrno1IrtC744n9ixiU8mbNJ-RLfjuCzy7z9hufdpzb5XN1Rl-Rg96vSA37eAeYLuqPwQPRx1njxE903mr6yeoj8WRLhIcQsiPAIRtiDC-yDCHYhwmWMLIhxfYS1qDCLcg0hPtiDCBkS4A9EztJqfLj-cud3FHK6E8Ld2w0QpL6ARTUMWwpBiCQNDnqTTVMlEzTiHqDYlUQjkmE1lSoAGQlzkJdIPo5jP_OfoIC9y9QJhGSsSpVOaxh4l0gOTkvhRFIA4fRMR847QsV1jUbYNWARhBFgvhcmTftHtnEmq4FxojQmtMeETwUSrsSP0tleNADOqz8aiXBVNBRGwjoR44PHjW_zmJXowoP0VOqh3jXoN5LSO3xhI_QUhY5Ii |
| linkProvider | IOP Publishing |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Formation+of+single+crystalline+tellurium+supersaturated+silicon+pn+junctions+by+ion+implantation+followed+by+pulsed+laser+melting&rft.jtitle=Journal+of+semiconductors&rft.au=Wang%2C+X&rft.au=Huang%2C+Y&rft.au=Liu%2C+D&rft.au=Zhu%2C+X&rft.date=2013-06-01&rft.issn=1674-4926&rft.volume=34&rft.issue=6&rft.spage=063001&rft.epage=1-5&rft_id=info:doi/10.1088%2F1674-4926%2F34%2F6%2F063001&rft.externalDBID=NO_FULL_TEXT |
| thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F94689X%2F94689X.jpg |